SGS Thomson Microelectronics STW14NM50FD, STP12NM50FDFP, STP12NM50FD, STB12NM50FD-1, STB12NM50FD Datasheet
STP12NM50FD-STP12NM50FDFP-STW14NM50FD
STB12NM50FD - STB12NM50FD-1
N-CHANNEL500V-0.32Ω-12ATO-220/FP/D2PAK/I2PAK/TO-247
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE V
STP12NM50 FD
STP12NM50 FDFP
STB12NM50 FD
STB12NM50 FD-1
STW14NM50 FD
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
500 V
500 V
500 V
500 V
500 V
(on) = 0.32 Ω
DS
DSS
R
DS(on)
< 0.4 Ω
< 0.4 Ω
< 0.4 Ω
< 0.4 Ω
< 0.4 Ω
I
D
12 A
12 A
12 A
12 A
14 A
Pw
160 W
35 W
160 W
160 W
175 W
CHARGE
■ LOW GATE INPUT RESIST ANC E
■ TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™
associates all advantages of re-
duced on-resistance and fast swi tching with an intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
3
2
TO-220 TO-220FP
1
TO-247
3
I2PAK
3
2
1
D
2
PAK
1
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP12NM50FD P12NM50FD TO-220 TUBE
STP12NM50FDFP P12NM50FDFP TO-220FP TUBE
STB12NM50FD B12NM50FD
STB12NM50FDT4 B12NM50FD
STB12NM50FD-1 B12NM50FD
STW14NM50FD W14NM50FD TO-247 TUBE
2
PAK
D
2
D
PAK
2
I
PAK
TUBE
TAPE & REEL
TUBE
1/14June 2002
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TO-220 /
2
PAK / I2PAK
D
V
I
DM
P
V
V
DS
DGR
GS
I
D
I
D
TOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
(l)
Drain Current (pulsed) 48 48 (*) 56 A
Total Dissipation at TC = 25°C
12 12 (*) 14 A
7.5 7.5 (*) 8.8 A
160 35 175 W
Derating Factor 1.28 0.28 1.4 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns
V
ISO
T
j
T
stg
(l) Pulse wi dth limited by saf e operating area
(1) I
≤12A, di/dt ≤ 400 µA, VDD ≤ V
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
, Tj ≤ T
(BR)DSS
JMAX.
TO-220FP TO-247
500 V
500 V
- 65 to 150
- 65 to 150
°C
°C
THERMA L D ATA
TO-220
2
PAK
I
Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 0.715 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
2
D
TO-220FP TO-247
PAK
30 °C/W
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID = IAR, VDD = 50 V)
j
6A
400 mJ
2/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS = 15 V, ID= 6 A 9.8 S
fs
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance f=1 MHz Gate DC Bias = 0
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID = 1 mA, VGS = 0 500 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 30V ±100 nA
GS
V
= VGS, ID = 250µA
DS
345V
10
1
µA
µA
VGS = 10V, ID = 6A 0.32 0.4 Ω
= 25V, f = 1 MHz, VGS = 0 1027
V
DS
205
24
pF
pF
pF
3.7 Ω
Test Signal Level = 20mV
Open Drain
VDD = 250 V, ID = 6 A
R
= 4.7Ω VGS = 10 V
G
19
10
(Resistive Load see, Figure 3)
= 400V, ID = 12 A,
V
DD
VGS = 10V
27.5
8
12
38.5
nC
nC
nC
ns
ns
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 400 V, ID = 12 A,
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
V
DD
R
=4.7Ω, V
G
GS
= 10V
(Inductive Load see, Figure 5)
39
18
29
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, VGS = 0
I
SD
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
= 12 A, di/dt = 100A/µs
224
1.3
12
12
48
1.5 V
ns
ns
ns
A
A
ns
µC
A
3/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Safe Operating Area For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
4/14
Thermal Impedance For TO-247
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteristics
Gate Charge vs Gate-source Voltage Capacitance Var iations
5/14
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