SGS Thomson Microelectronics STP12NB30FP, STP12NB30 Datasheet
N - CHANNEL ENHANCEMENT MODE
TYPE V
STP3NB60
ST P12NB30FP
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
DSS
300 V
300 V
=0.34 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
R
DS(on)
<0.40Ω
<0.40Ω
I
D
12A
6.5 A
STP12NB30
STP12NB30FP
PowerMESH MOSFET
PRELIMINARY DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGHSPEEDSWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY(UPS)
■ DC-DC& DC-AC CONVERTERSFOR
TELECOM,INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
ST P12 NB30 ST P12 NB30FP
V
V
V
I
DM
P
dv/dt(
V
T
Drain-source Voltage (VGS=0) 300 V
DS
DGR Drain- gate Voltage (R
Gat e- source Vo lt age ± 30 V
GS
I
Drain Cur rent (c on t inuous) a t Tc=25oC126.5A
D
Drain Cur rent (c on t inuous) a t Tc=100oC7.54A
I
D
=20kΩ)
GS
300 V
(•) Dra in Curr ent (pulsed) 48 48 A
Tot al Dissip at ion at Tc=25oC12535W
tot
Derat in g F ac tor 1 0.28 W/
1) Peak Diode Rec overy voltage slope 5.5 5.5 V/ns
Ins ulation Withsta nd Voltage ( D C) 2000 V
ISO
Sto rage Tempe rature -65 to 150
stg
T
Max. Operating Ju nc tion T emperat ure 150
j
o
C
o
C
o
C
January 1998
1/6
STP12NB30/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-case M ax 1 3.57
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T y p
Maximum Lead Tem per a t u re F o r Soldering Purpos e
l
Avalanche Cur rent, Repet it i v e or Not-Re petitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
62.5
0.5
300
12 A
250 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
300 V
Breakdown V oltage
I
DSS
I
GSS
Zer o Gat e V o lt age
Drain Current (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c D rain-source On
VGS=10V ID=6A 0.34 0.4 Ω
Resistance
I
D(on)
On State Drain Curre nt VDS>I
D(on)xRDS(on)max
12 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capac i t an c e
iss
Out put C apa c itance
oss
Reverse Transf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=6A 3 S
VDS=25V f=1MHz VGS= 0 1000
200
25
1400
270
35
µA
µA
pF
pF
pF
2/6
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