SGS Thomson Microelectronics STP11NK40ZFP, STP11NK40Z, STB11NK40Z Datasheet
STP11NK40Z - STP11NK40ZFP
STB11NK40Z
N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP11NK40Z
STP11NK40ZFP
STB11NK40Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
400 V
400 V
400 V
(on) = 0.49 Ω
DS
DSS
R
DS(on)
< 0.55 Ω
< 0.55 Ω
< 0.55 Ω
I
D
9A
9A
9A
Pw
110 W
30 W
110 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most dem anding applications. Such series complements S T full range of high voltage MOSFETs including revolutionary MDmes h™ products.
TO-220 TO-220FP
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP11NK40Z P11NK40Z TO-220 TUBE
STP11NK40ZFP P11NK40ZFP TO-220FP TUBE
STB11NK40ZT4 B11NK40Z
2
PAK
D
TAPE & REEL
1/12April 2003
STP11NK40Z - STP11NK40ZF P - STB11NK40Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP11NK40Z
STB11NK40Z
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
400 V
400 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 36 36(*) A
Total Dissipation at TC= 25°C
9 9(*) A
5.67 5.67(*) A
110 30 W
Derating Factor 0.88 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Viso Insulation Withstand Voltage (DC) -- 2500 V
T
j
T
stg
() Pulse width limited by safe operating area
≤9A, di/dt ≤200A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55 to 150
-55 to 150
STP11NK40ZFP
°C
°C
THERMAL DATA
TO-220
2
PAK
D
Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
TO-220FP
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID=IAR,VDD=50V)
j
9A
190 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in bac k - to -b ac k Zener diodes have specifically been des igned to enhance not only the device’s
ESD capability, but als o to make them safely absorb possible voltage transients that may occasional ly be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
STP11NK40Z - S TP11NK40Z FP - STB11NK40Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHE RWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 4.5 A 5.8 S
g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
C
oss eq.
C
iss
C
oss
C
rss
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=1mA,VGS= 0 400 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20 V ±10 µA
GS
V
DS=VGS,ID
= 100 µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 4.5 A 0.49 0.55 Ω
=25V,f=1MHz,VGS= 0 930
V
DS
140
30
VGS=0V,VDS=0Vto400V 78 pF
VDD=200V,ID= 4.5 A
RG= 4.7Ω VGS=10V
20
20
(Resistive Load see, Figure 3)
=320V,ID=9 A,
V
V
DD
GS
=10V
32
6
45
18.5
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD=200 V, ID= 4.5 A
R
=4.7ΩVGS=10V
G
40
18
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
= 320 V, ID=9A,
V
DD
RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)
15
17
30
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
9
36
I
SDM
I
SD
Source-drain Current
(2)
Source-drain Current (pulsed)
VSD(1) Forward On Voltage ISD= 9 A, VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
= 9 A, di/dt = 100 A/µs
I
SD
VDD=45V,Tj= 150°C
(see test circuit, Figure 5)
225
1.6
14
when VDSincreases from 0 to 80%
oss
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/12
STP11NK40Z - STP11NK40ZF P - STB11NK40Z
Safe Operating Area For TO-220/D2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK
Thermal Impedance For TO-220FP
Output Characteristics
4/12
Transfer Characteristics
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