SGS Thomson Microelectronics STP11NC40FP, STP11NC40 Datasheet
STP11NC40, STP11NC40FP
N-CH A NNEL 400V - 0.44Ω - 9.5A TO-220/TO-220FP
PowerMESH™II Power MOSFET
TYPE V
STP11NC40
STP11NC40FP
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
400 V
400 V
(on) = 0.44 Ω
DS
DSS
R
DS(on)
< 0.55 Ω
< 0.55 Ω
I
D
9.5 A
9.5 A(*)
Pw
120 W
30 W
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP11NC40 P11NC40 TO-220 TUBE
STP11NC40FP P11NC40FP TO-220FP TUBE
1/10January 2002
STP11NC40, STP11NC40FP
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP11NC40 STP11NC40FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns
V
ISO
T
j
T
stg
(l) Pulse wi dth limited by safe operating area
≤9.5A, di/dt ≤100A/µs, VDD ≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
400 V
400 V
Gate- source Voltage ± 30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 38 38 (*) A
Total Dissipation at TC = 25°C
9.5 9.5 (*) A
6 6 (*) A
120 30 W
Derating Factor 0.96 0.24 W/°C
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
, Tj ≤ T
(BR)DSS
JMAX.
-55 to 150
-55 to 150
°C
°C
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.04 4.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
9.5 A
300 mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 400 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 30V ±100 nA
GS
V
= VGS, ID = 250µA
DS
234V
1
50
VGS = 10V, ID = 5 A 0.44 0.55 Ω
µA
µA
2/10
STP11NC40, STP11NC40FP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V, ID= 5 A 8.6 S
g
fs
C
iss
C
oss
C
rss
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 25V, f = 1 MHz, VGS = 0 995
V
DS
VDD = 200 V, ID = 5 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
= 320V, ID = 10 A,
V
DD
VGS = 10V
VDD = 320 V, ID = 5 A
RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
= 320V, ID = 10 A,
V
DD
RG=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
ISD = 9.5 A, VGS = 0
= 9.5 A, di/dt = 100A/µs
I
SD
V
= 100V, Tj = 150°C
DD
(see test circuit, Figure 5)
Safe Operating Area For TO-220FPSafe Operating Area For TO-220
172
25
15
18
32.5
6
15
43
15
7.5
14
23
315
2100
13.6
45.5
9.5
38
1.6 V
pF
pF
pF
ns
ns
nC
nC
nC
ns
ns
ns
ns
ns
A
A
ns
nC
A
3/10
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