SGS Thomson Microelectronics STP11NB40, STP11NB40FP Datasheet

STP11NB40



STP11NB40FP

N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP

PowerMESH MOSFET

TYPE V

STP11NB4 0 STP11NB4 0FP

■ TYPICALR

■ EXTREMELYHIGH dV/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

400 V 400 V

= 0.48

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

R

DS(on)

<0.55Ω <0.55

Ω

I

D

10.7 A

6.0 A

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGHSPEEDSWITCHING

■ SWITCHMODE POWER SUPPLIES(SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P11 NB40 ST P1 1NB40F P

V

I

DM

P

dv/ dt(

V

T

(•) Pulse width limited by safe operating area (1)ISD≤ 10.7A, di/dt ≤ 200 A/µs, VDD≤ V

September 1998

Drain-source Voltage (VGS=0) 400 V

DS

Dra in- gat e Voltage (RGS=20kΩ)

DGR

Gate -sourc e Voltage

GS

Drain Current (continuous) at Tc=25oC 10.7 6.0 A

I

D

Drain Current (continuous) at Tc=100oC6.73.8A

I

D

400 V

30 V

±

(•) Dra in C urr en t (pu lsed) 42.8 42.8 A

Total Dissipation at Tc=25oC 125 40 W

tot

Derating Factor 1.0 0.32 W/

) Peak Dio de Recove ry voltage slope 4.5 4.5 V/ns

1

Insulat ion Withst and Voltage (DC)  2000 V

ISO

St orage Temperat ur e -65 to 1 50

stg

T

Max. Op er a t ing J unctio n Tem pe r at u r e 150

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STP11NB40/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resis t an ce Junc ti on-cas e Max 1. 0 3.1 2 Ther mal Resis t an ce Junc ti on-ambien t M a x

Thermal Resistance Case-sink Typ Maximum Lead Temper at u r e Fo r Solder ing P ur p ose

l

Avalanche Cu rr ent, Repet it iv e or Not-Repetit iv e (pulse width limite d by T

Single Pulse Ava lanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

10.7 A

530 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

400 V

Break d own Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain C u rr ent (V

GS

Gat e- b ody Le ak a ge Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

345V

Voltage

R

DS(on)

Static Drain-source O n

VGS=10V ID= 5 .3 A 0.48 0.55 Ω

Resistanc e

I

D(on)

On State Drain Cu rr ent VDS>I

D(on)xRDS(on)max

10.7 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansconduc tance

C

Input Capacit ance

iss

Out put Capacita nc e

oss

Reverse Tran sfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=5.3A 5 6.5 S

VDS=25V f=1MHz VGS= 0 1250

210

22

1625

284

30

µ µA

pF pF pF

A

2/9

STP11NB40/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(on)

Turn-on Time

t

r

Rise Time

VDD= 200 V ID=5.3A

=4.7 Ω VGS=10V

R

G

17 10

25 15

(see test circuit, figure 3)

Q Q Q

Total Gate Charge

g

Gat e- Source Cha r ge

gs

Gate-Drain Charg e

gd

VDD= 320 V ID= 10.7 A VGS=10V 29

10.6

11.8

41 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

r(Voff)

t

Off -voltage Rise Time Fall Time

f

Cross-ov er T i m e

c

VDD= 320 V ID= 10.7 A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

10 10 17

14 14

25

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain Curr ent

(•)

Source-drain Curr ent

10.7

42.8

(pulsed)

(∗) For ward On Voltage ISD=10.7A VGS=0 1.6 V

Reverse Reco v ery

rr

Time Reverse Reco v ery

rr

= 10.7 A di/d t = 100 A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see test circuit, figure 5)

400

3.4 Charge Reverse Reco v ery

17

Current

ns ns

nC nC

ns ns ns

A A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9