SGS Thomson Microelectronics STW10NK80Z, STP10NK80ZFP, STP10NK80Z Datasheet
STP10NK80Z - STP10NK80ZFP
STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power M OSF ET
TYPE V
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
800 V
800 V
800 V
(on) = 0.78 Ω
DS
DSS
R
DS(on)
< 0.90 Ω
< 0.90 Ω
< 0.90 Ω
I
D
9A
9A
9A
Pw
160 W
40 W
160 W
REPEATIBILITY
DESCRIPTION
The SuperME SH™ series is obtained through an
extreme optimization of ST’s we ll established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements S T full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220
1
3
2
TO-220FP
TO-247
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP10NK80Z P10NK80Z TO-220 TUBE
STP10NK80ZFP P10NK80ZFP TO-220FP TUBE
STW10NK80Z W10NK80Z TO-247 TUBE
1/11February 2003
STP10NK80Z - STP10NK80ZF P - STW10NK80Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP10NK80Z STP10NK80ZFP STW10NK80Z
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤9A, di/dt ≤200A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
800 V
800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
9 9 (*) 9 A
6 6 (*) 6 A
Drain Current (pulsed) 36 36 (*) 36 A
Total Dissipation at TC= 25°C
160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4KV
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55to150
-55to150
°C
°C
THERMAL DATA
TO-220 TO-220FP TO-247
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 0.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID=IAR,VDD=50V)
j
9A
290 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/11
STP10NK80Z - STP10NK 80ZFP - STW10NK80Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 4.5 A 9.6 S
g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
C
oss eq.
C
iss
C
oss
C
rss
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=1mA,VGS= 0 800 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 4.5 A 0.78 0.9 Ω
=25V,f=1MHz,VGS= 0 2180
V
DS
205
38
VGS=0V,VDS= 0V to 640V 105 pF
VDD=400V,ID= 4.5 A
RG= 4.7Ω VGS=10V
30
20
(Resistive Load see, Figure 3)
=640V,ID=9A,
V
V
DD
GS
=10V
72
12.5
101
37
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 400 V, ID= 4.5 A
R
=4.7ΩVGS=10V
G
65
17
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
f
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 640V, ID=9A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
13
10
25
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 9 A, VGS=0
I
SD
VDD=45V,Tj= 150°C
(see test circuit, Figure 5)
= 9 A, di/dt = 100A/µs
645
6.4
20
when VDSincreases from 0 to 80%
oss
9
36
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/11
STP10NK80Z - STP10NK80ZF P - STW10NK80Z
Safe Operating Area For TO-220 Thermal Imped ance For TO-220
Thermal Impedance For TO-220F PSafe Operating Area For TO-220FP
4/11
Thermal Impedance For TO-247Safe Operating Area For TO-247
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