SGS Thomson Microelectronics STP10NK70ZFP, STP10NK70Z Datasheet
STP10NK70Z
STP10NK70ZFP
N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP10NK70Z
STP10NK70ZFP
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RA TED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
700 V
700 V
(on) = 0.75 Ω
DS
DSS
R
DS(on)
< 0.85 Ω
< 0.85 Ω
I
D
8.6 A
8.6 A
Pw
150 W
35 W
REPEATIBILITY
DESCRIPTION
The SuperMESH ™ series is obtained through an
extreme optimization of ST ’s well established stripbased PowerMESH™ layout. In addition to pus hing
on-resistance significantly down, special careis taken to ensure a very good dv /dt capability fo r the
most demanding applicat ions. Such series compl ements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP10NK70Z P10NK70Z TO-220 TUBE
STP10NK70ZFP P10NK70ZFP TO-220FP TUBE
1/10October 2002
STP10NK70Z/STP10NK70ZFP
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP10NK70Z STP10NK70ZFP
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤8.6A, di/dt ≤200A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
700 V
700 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
8.6 8.6 (*) A
5.4 5.4 (*) A
Drain Current (pulsed) 34 34 (*) A
Total Dissipation at TC= 25°C
150 35 W
Derating Factor 1.20 0.28 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 KV
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55 to 150
-55 to 150
°C
°C
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
8.6 A
350 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this r es pec t the Zener voltage is appropriate to ac hieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
STP10NK70Z/STP10NK70ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
I
GSS
V
GS(th)
R
DS(on)
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 4.5 A 7.7 S
g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
C
oss eq.
C
iss
C
oss
C
rss
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=1mA,VGS= 0 700 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 4.5 A 0.75 0.85 Ω
=25V,f=1MHz,VGS= 0 2000
V
DS
190
41
VGS=0V,VDS= 0V to 560V 98 pF
VDD=350V,ID= 4.5 A
RG= 4.7Ω VGS=10V
22
19
(Resistive Load see, Figure 3)
=560V,ID=9A,
V
DD
V
=10V
GS
64
12
33
90
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 350 V, ID= 4.5 A
R
=4.7ΩVGS=10V
G
46
19
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
= 560 V, ID=9A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
11
10
22
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 8.6 A, VGS=0
I
SD
VDD=35V,Tj= 150°C
(see test circuit, Figure 5)
= 9 A, di/dt = 100A/µs
720
5.4
15
when VDSincreases from 0 to 80%
oss
8.6
34
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/10
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