SGS Thomson Microelectronics STP10NC50FP, STP10NC50 Datasheet

STP10NC50



N - CHANNEL 500V - 0.48Ω - 10A - TO-220/TO-220FP

TYPE V

STP10NC50 STP10NC50FP

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

500 V 500 V

= 0.48

DESCRIPTION

Using the latest high voltageMESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

R

DS(on)

<0.52Ω <0.52

Ω

I

D

10 A 10 A

STP10NC50FP

PowerMESH MOSFET

PRELIMINARY DATA

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SWITCHMODE POWER SUPPLIES(SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P10 NC50 ST P1 0NC50F P

V

I

DM

P

dv/ dt(

V

T

(•) Pulsewidth limited by safe operating area (1)ISD≤ 10 A, di/dt ≤100 A/µs,VDD≤ V (*) Limited only by maximum temperature allowed

November 1999

Drain-sour ce Voltage (VGS=0) 500 V

DS

Drain- gat e Voltage (RGS=20kΩ)

DGR

Gate-sourc e Voltage ± 30 V

GS

Drain Current (continuous) at Tc=25oC 10 10(*) A

I

D

Drain Current (continuous) at Tc= 100oC6.36.3(*)A

I

D

500 V

(•) D r ain Current (pulsed ) 40 40 A

Total Dissipation at Tc=25oC 135 40 W

tot

Derating Factor 1.08 0.32 W/

1) Peak Diode Reco very voltag e slope 3 3 V/ns

Ins ulation Wi th st and V ol t age (DC)  20 00 V

ISO

Sto rage Te m pe r ature -65 to 150

stg

Max. Ope rating Junct ion T em p eratur e 150

T

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/7

STP10NC50STP10NC50FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resis t an ce Junc ti on-cas e Max 0.93 3.12 Ther mal Resis t an ce Junc ti on-ambien t Ma x

Thermal Resistance Case-sink Typ Maximum Lead Tem peratu re Fo r Soldering P urpose

l

Avalanche Cur rent, Repet it ive or Not-Re petitive (pulse width limited by T

Single Pu lse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

10 A

550 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

500 V

Break d own V o lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Cu rr ent (V

GS

Gat e- b ody Le aka ge Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

234V

Voltage

R

DS(on)

Static Drain-source On

VGS=10V ID= 5 A 0.48 0.52 Ω

Resistanc e

I

D(on)

On Stat e D rain Cur rent VDS>I

D(on)xRDS(on)max

10 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansconduc tance

C

Input Cap ac i t an c e

iss

Out put Capacita nce

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=5 A 10 S

VDS=25V f=1MHz VGS= 0 1480

210

25

µ µA

pF pF pF

A

2/7

STP10NC50 STP10NC50FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(on)

Q Q Q

Turn-on Time

t

Rise Time

r

Total Gate Charge

g

Gat e- Source Cha rge

gs

Gate-Drain Charge

gd

VDD= 250 V ID=5A R

=4.7

G

Ω

VGS=10V

VDD= 160 V ID=10A VGS=10V 41

29 16

49 nC 12 19

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

r(Voff)

t

Off -voltage Rise Time Fall Time

f

Cross-ov er Ti m e

c

VDD= 160 V ID=10A

=4.7 ΩVGS=10V

R

G

16 18 29

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain Curr ent

(•)

Source-drain Curr ent

10.6

42.4

(pulsed)

(∗) For ward On Voltage ISD=10 A VGS=0 1.6 V

Reverse Reco very

rr

Time Reverse Reco very

rr

=10 A di/ dt = 100 A/µs

I

SD

=50V Tj= 150oC

V

DD

560

4.9 Charge Reverse Reco very

17.5

Current

ns ns

nC nC

ns ns ns

A A

ns nC

A

3/7