SGS Thomson Microelectronics STP10NB60SFP Datasheet
1/8June 2002
STGP10NB60SFP
N-CHANNEL 10A - 600V - TO-220FP
PowerMesh™ IGBT
(●) Pulse wi dt h l i mit ed by saf e o per at ing ar ea
■ HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
TYPE V
CES
V
CE(sat)
I
C
STGP10NB60SFP 600 < 1.7 V 10 A
Symbol Parameter Value Unit
V
CES
Collector-Em itter Voltage (VGS = 0)
600 V
V
ECR
Reverse Battery Protection 20 V
V
GE
Gate-Emitter Voltage ± 20 V
I
C
Collector Current (continuous) at TC = 25°C
20 A
I
C
Collector Current (continuous) at TC = 100°C
10 A
I
CM
(n)
Collector Current (pulsed) 80 A
P
TOT
Total Dissipation at TC = 25°C
31.5 W
Derating Factor 0.21 W/°C
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220FP
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STGP10NB60SFP
2/8
THERMA L D ATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 4.7 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Break-down
Voltage
IC = 250 µA, VGE = 0, 600 V
V
BR(CES)
Emitter Collector Break-down
Voltage
I
C
= 1 mA, VGE = 0, 20 V
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
= Max Rating ,Tj =25 °C
VCE = Max Rating ,Tj =125 °C
10
100
µA
µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20V , VCE = 0 ± 100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage VCE = VGE, IC = 250µA 2.5 5 V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
VGE =15V, IC = 5 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 25°C
VGE =15V, IC = 10 A, Tj= 125°C
1.15
1.35
1.25
1.7
V
V
V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance
V
CE
= 25 V , IC=10 A
5S
C
ies
Input Capacitance
V
CE
= 25V, f = 1 MHz, VGE = 0
610 pF
C
oes
Output Capacitance 65 pF
C
res
Reverse Transfer
Capacitance
12 pF
Q
g
Gate Charge VCE = 400V, IC = 10 A,
VGE = 15V
33 nC
I
CL
Latching Current V
clamp
= 480V, RG= 1kΩ,
Tj= 125°C
20 A
3/8
STGP10NB60SFP
SWITCHING ON
SWITCHING OFF
(●)Pulsed: P ul se duration = 300 µ s, duty cycle 1.5 %.
(1)Pulse wi dth limit ed by max. jun ct i on temper at ure.
(**)Losses Include Also the Tail
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, IC = 10 A
R
G
=1KΩ , VGE = 15 V
0.7 µs
t
r
Rise Time 0.46 µs
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, IC = 10 A
R
G
=1KΩ, VGE = 15 V
8
0.6
A/µs
mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
Cross-over Time
V
clamp
= 480 V, IC = 10 A,
RGE = 1K Ω , VGE = 15 V
2.2 µs
tr(V
off
)
Off Voltage Rise Time 1.2 µs
t
f
Fall Time 1.2 µs
E
off
(**)
Turn-off Switching Loss 5.0 mJ
t
c
Cross-over Time
V
clamp
= 480 V, IC = 10 A,
RGE = 1KΩ , VGE = 15 V
Tj = 125 °C
3.8 µs
t
r(Voff
)
Off Voltage Rise Time 1.2 µs
t
f
Fall Time 1.9 µs
E
off
(**)
Turn-off Switching Loss 8.0 mJ
Thermal ImpedanceSwitching Off Safe Operating Area
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