SGS Thomson Microelectronics STP10NB50 Datasheet

STP10NB50
STP10NB50FP
N - CHANNEL 500V - 0.55- 10.6A - TO-220/TO-220FP
PowerMESH MOSFET
TYPE V
STP10NB5 0 STP10NB5 0FP
TYPICALR
100%AVALANCHETESTED
VERYLOW INTRINSICCAPACITANCES
GATECHARGE MINIMIZED
DS(on)
DSS
500 V 500 V
= 0.55
DESCRIPTION
Using the latesthigh voltage MESHOVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
R
DS(on)
<0.60 <0.60
I
D
10.6 A
10.6 A
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
HIGHCURRENT, HIGHSPEEDSWITCHING
SWITCHMODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P10 NB50 ST P1 0NB50F P
V
V
V
I
DM
P
dv/ dt(
V
T
() Pulse width limited by safe operating area (1)ISD≤ 10.6 A, di/dt≤ 200A/µs,VDD≤ V (*) Limited only by maximum temperatureallowed
October 1999
Drain-sour ce Voltage (VGS=0) 500 V
DS
Drain- gat e Voltage (RGS=20kΩ)
DGR
Gate-sourc e Voltage ± 30 V
GS
Drain Current ( continuous) at Tc=25oC 10.6 10.6( * ) A
I
D
Drain Current ( continuous) at Tc= 100oC6.46.4(*)A
I
D
500 V
() D r ain Current ( pul s ed ) 42.4 42.4 A
Total Dissipation at Tc=25oC 135 40 W
tot
Derating Fac t or 1.08 0.32 W/
1) Peak Diode Recovery voltag e slope 4.5 4.5 V/ns
Ins ulation With s t an d Voltag e (DC) 2000 V
ISO
Sto rage Te mpe r ature -65 to 150
stg
Max. Oper ating Junct ion Tem p er a t ure 150
T
j
(BR)DSS
,TjT
JMAX
o
C
o
C
o
C
1/9
STP10NB50STP10NB50FP
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue U ni t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max 0.93 3.12 Ther mal Resis t an ce Junc ti on-ambien t Ma x
Thermal Resistance Case-sink Typ Maximum Lead Temper at ure For Sold er ing Purp os e
l
Avalanche Current, Repet it ive or No t -Repet it ive (pulse width limited by T
Single Pulse Avalanche Energ y
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
10.6 A
550 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
500 V
Break d own Vo lt age
I
DSS
I
GSS
Zero Gate Voltage Drain Cu rr ent (V
GS
Gat e- b ody Leakage Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
=± 30 V
V
GS
1
50
± 100 nA
ON()
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250µA
345V
Voltage
R
DS(on)
Static Drain-source On
VGS=10V ID= 5.3 A 0.55 0.60
Resistanc e
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
10.6 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Capac i t ance
iss
Out put Capac it a nc e
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=5.3 A 5 8 S
VDS=25V f=1MHz VGS= 0 1480
210
25
µ µA
pF pF pF
A
2/9
STP10NB50 STP10NB50FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
r
Rise Time
t
VDD= 250 V ID=5.3A R
=4.7
G
VGS=10V
25 13
14 20
(see te st circuit, f igure 3)
Q Q Q
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 160 V ID=10A VGS=10V 38
10 17
49 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage Rise Time Fall Time
f
Cross-ov er Ti me
c
VDD= 160 V ID=10A
=4.7 ΩVGS=10V
R
G
(see te st circuit, f igure 5)
13 15 25
11 14 28
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, dutycycle 1.5% () Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
10.6
42.4
(pulsed)
(∗) F or ward On Voltage ISD=10.6 A VGS=0 1.6 V
Reverse Recovery
rr
Time Reverse Recovery
rr
=10.6 A di/dt = 100 A/µs
I
SD
=50V Tj= 150oC
V
DD
(see te st circuit, f igure 5)
560
4.9 Charge Reverse Recovery
17.5
Current
ns ns
nC nC
ns ns ns
A A
ns nC
A
SafeOperating Area SafeOperating Area for TO-220FP
3/9
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