SGS Thomson Microelectronics STP10NA40FI, STP10NA40 Datasheet
STP10NA40
STP10NA40FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.46 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STP 10NA40
STP 10NA40F I
400 V
400 V
<0.55Ω
<0.55Ω
10 A
6A
1
2
3
TO-220 ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP1 0NA40 STP 10NA40FI
V
DS
Drain - s ource Voltage (VGS=0) 400 V
V
DGR
Drain - gat e Voltage (RGS=20kΩ)400V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at Tc=25oC106A
I
D
Drain Current (continuous) at Tc=100oC6.3 3.8A
I
DM
(•) Drain Current (pulsed) 40 40 A
P
tot
Total Di ssipation at Tc=25oC 125 45 W
Derating F actor 1 0.36 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 2000 V
T
stg
St or a ge Tem perature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulsewidth limited bysafe operating area
1
2
3
1/10
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
Thermal Resistance J unction- c ase Max 1 2.78
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junc tion-am bie nt Max
Thermal Resistance Cas e-sink Typ
Maximum Lead T emperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
10 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=50V)
500 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
20 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
6.3 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 400 V
I
DSS
Zer o Gate Volt age
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
25
250
µA
µA
I
GSS
Gat e- body Leak age
Current (V
DS
=0)
V
GS
= ± 30 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=10V ID=5A 0.46 0.55 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
10 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=5A 5 7.2 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS= 0 1180
200
55
1600
260
75
pF
pF
pF
STP10NA40/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on T im e
Rise Time
VDD=200V ID=5A
RG=47 Ω VGS=10V
(see test circuit, figure 3)
35
11550155
ns
ns
(di/dt)
on
Turn-on C urrent S lope VDD=320V ID=10A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
250 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD= 320 V ID=10A VGS=10V 54
8
27
75 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=320V ID=10A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
75
30
120
105
45
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
V
SD
(∗) Forward On Voltage ISD=10A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 10 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
470
6.5
27.5
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220
STP10NA40/FI
3/10
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