SGS Thomson Microelectronics STP100NF04L Datasheet
STP100NF04L
N-CHANNEL 40V - 0.0036 Ω - 100A TO-220
STripFET™ II POWER MOSFET
TYPE
V
DSS
STP100NF04L 40 V <0.0042
■ TYPICAL R
■ LOW THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
■ LOGIC LEVEL DEVICE
(on) = 0.0036 Ω
DS
R
DS(on)
I
D
100 A
Ω
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(*) Drain Current (continuos) at TC = 25°C
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse widt h l i m i ted by safe operating area.
•)
(*) Curren t Lim i ted by package
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
40 V
40 V
Gate- source Voltage ± 16 V
100 A
Drain Current (continuos) at TC = 100°C
•)
Drain Current (pulsed) 400 A
Total Dissipation at TC = 25°C
70 A
300 W
Derating Factor 2 W/°C
(1)
Peak Diode Recovery voltage slope 3.6 V/ns
(2)
Single Pulse Avalanche Energy 1.4 J
Storage Temperature -65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ T
(2) Starting Tj = 25 oC, IAR = 50A, VDD= 30V
JMAX
1/8February 2002
STP100NF04L
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
j
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
40 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 50 A
V
GS
V
= 4.5 V ID = 50 A
GS
= 250 µA
D
1V
0.0036
0.0040
0.0042
0.0065
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID= 20 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
50 S
6400
1300
190
µA
µA
Ω
Ω
pF
pF
pF
2/8
STP100NF04L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
37
270
= 20 V ID = 50 A
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 32V ID= 100A VGS= 4.5V
V
DD
72
20
28.5
90 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
= 20 V
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
(Resistive Load, Figure 3)
D
GS
= 50 A
= 4.5 V
90
80
ns
ns
nC
nC
ns
ns
t
r(Voff)
t
t
f
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 32 V ID = 100 A
V
clamp
R
= 4.7Ω, V
G
GS
= 4.5 V
(Inductive Load, Figure 5)
85
125
160
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 100A VGS = 0
SD
= 100 A di/dt = 100A/µs
I
SD
V
= 20 V Tj = 150°C
DD
(see test circuit, Figure 5)
Thermal ImpedanceSaf e Operating Are a
100
400
1.3 V
88
240
5.5
ns
ns
ns
A
A
ns
nC
A
3/8
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