SGS Thomson Microelectronics STP100NF04, STB100NF04-1, STB100NF04 Datasheet
STP100NF04
STB100NF04, STB100NF04-1
N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE V
STP100NF0 4
STB100NF0 4
STB100NF0 4-1
■ TYPICAL R
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
DSS
40 V
40 V
40 V
(on) = 0.0043 Ω
DS
R
DS(on)
< 0.0046 Ω
< 0.0046 Ω
<0.0046 Ω
I
D
120 A
120 A
120 A
Pw
300 W
300 W
300 W
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size
™”
strip-based process. The res ulting transistor sh ows
extremely high packing density for low on-resistance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
TO-220
1
D2PAK
I2PAK
3
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP100NF04 P100NF04 TO-220 TUBE
STB100NF04T4 B100NF04
STB100NF04-1
February 2002
B100NF04
2
D
PAK
2
I
PAK
TAPE & REEL
TUBE
1/15
STP100NF04, STB100NF04, STB100NF04-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(#) Drain Current (continuos) at TC = 25°C
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
E
AS
T
j
T
stg
(l) Pulse wi dth limited by saf e operating area
(1) I
≤120A, di/dt ≤ 300A/µs, VDD ≤ V
SD
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max See Curve on page 6 °C/W
Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W
T
l
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
40 V
40 V
Gate- source Voltage ± 20 V
120 A
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C
120 A
300 W
Derating Factor 2 W/°C
(2)
Single Pulse Avalanche Energy 1.2 J
Operating Junction Temperature
-55 to 175 °C
Storage Temperature
, Tj ≤ T
(BR)DSS
Maximum Lead Temperature For Soldering Purpose
JMAX.
TO-220 / I
2
PAK / D2PAK
300 °C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
2/15
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 40 V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
24V
1
10
VGS = 10V, ID = 50 A 0.0043 0.0046 Ω
µA
µA
STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS = 15 V, ID= 50 A 150 S
g
fs
C
iss
C
oss
C
rss
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
= 25V, f = 1 MHz, VGS = 0 5100
V
DS
VDD = 20 V, ID = 60 A
R
= 4.7Ω VGS = 10 V
G
(Resistive Load see, Figure 3)
= 32V, ID = 120 A,
V
DD
VGS = 10V
(see, Figure 4)
VDD = 20 V, ID = 60 A
RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
1300
160
35
220
110
35
35
80
50
150
pF
pF
pF
ns
ns
nC
nC
nC
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 120 A, VGS = 0
I
SD
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
= 120 A, di/dt = 100A/µs
75
185
5
120
480
1.3 V
A
A
ns
nC
A
3/15
STP100NF04, STB100NF04, STB100NF04-1
Power Derating vs Tc
Output Characteristics
Max Id Current vs Tc
Transfer Characteristics
Transconductance
4/15
Static Drain-source On Resistance
STP100NF04, STB100NF04, STB100NF04-1
Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperatur e
Source-drain Diode Forward Characteristics
Normalized Breakdown voltage vs Temperature
5/15
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