SGS Thomson Microelectronics STN817, STF817 Datasheet
STF817
STN817
PNP MEDIUM POWER TRANSISTORS
■ SURFACE-MOUNTING DEVICES IN
MEDIUM POWE R SO T-223 AND SO T-89
PACKAGES
■ AVAILABLE IN TAPE & REEL PACKING
APPLICATIONS
■ VOLTAGE REGULATION
■ RELAY DRIVER
■ GENERIC SWITCH
DECRIPTION
The STF817 and STN817 are PNP transistors
manufactured using Planar Technology resulting
in rugged high performance devices.
INTERNAL SCHEMATIC DIAGRAM
April 2002
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
Devices STN817 STF817
Packages SOT-223 SOT-89
V
CBO
Collector-Base Voltage (IE = 0) -120 V
V
CEO
Collector-Emitter Voltage (IB = 0) -80 V
V
EBO
Emitter-Base Voltage (IC = 0) -5 V
I
C
Collector Current -1.5 A
I
CM
Collector Peak Current (tp < 5 ms) -2 A
I
B
Base Current -0.3 A
I
BM
Base Peak Current (tp < 5 ms) -0.6 A
P
tot
Total Dissipation at Tc = 25 oC 1.6 1.4 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
2
3
SOT-223
®
SOT-89
Type Marking
STF817 817
STN817 N817
1/5
THERMAL DATA
SOT-223 SOT-89
R
thj-amb
• Thermal Resistance Junction-ambient Max 78 89
o
C/W
• Device mounted on a PCB area of 1 cm2.
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= -120 V -500 µA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= -80 V -1 mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V -100 µA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= -10 mA -80 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -100 mA IB = -10 mA
I
C
= -1 A IB = -100 mA
-0.25
-0.5
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -100 mA IB = -10 mA
I
C
= -1 A IB = -100 mA
-1
-1.1
V
V
h
FE
∗ DC Current Gain IC = -100 mA VCE = -2 V
I
C
= -500 mA VCE = -2 V
I
C
= -1 A VCE = -2 V
140
80
40
f
T
Transition Frequency IC = -0.1 A VCE = -10 V 50 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
STF817 - STN817
2/5
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