SGS Thomson Microelectronics STN7NF10 Datasheet
STN7NF10
N-CHANNEL 100V - 0.055 Ω -5ASOT-223
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE V
STN7NF10 100 V < 0.065 Ω 5A
■ TYPICAL R
■ APPLICATION ORIENTED
DS
DSS
(on) = 0.055 Ω
R
DS(on)
I
D
CHARACTERIZATION
DESCRIPTION
This Power MOSF ET s eries realized with STMicroelectronics uniqueSTripFET proces s hasspecifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters f or Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 20 A
Total Dissipation at TC= 25°C
Derating Factor 0.026 W/°C
Storage Temperature
Operating Junction Temperature
100 V
100 V
5A
3.4 A
3.3 W
–55 to 150 °C
1/8December 2002
STN7NF10
THERMAL DATA
Rthj-PCB Thermal Resistance Junction-PCB Max(*) 38 °C/W
Rthj-PCB Thermal Resistance Junction-PCB Max(**) 100 °C/W
T
l
Note: (*) When mounted on 1 in2FR-4 BOARD,2 oz Cu, t<10s.
Note: (**) When mounted on minimum footprint.
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case,for 10s)
260 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 100 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±20V ±100 nA
GS
10 µA
1µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 1.5 A
= 250µA
234V
0.055 0.065 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=1.5A 12 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 125 pF
Reverse Transfer
Capacitance
V
=25V,f=1MHz,VGS=0
DS
870 pF
52 pF
2/8
STN7NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 45 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 5 A
(1)
Source-drain Current (pulsed) 20 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=50V,ID=12A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
VDD=80V,ID=24A,
V
=10V
GS
VDD=50V,ID=12A,
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 3)
ISD= 5 A, VGS=0
= 5 A, di/dt = 100A/µs,
I
SD
VDD=30V,Tj= 150°C
(see test circuit, Figure 5)
58 ns
30
41 nC
6
10
49
17
1.3 V
100
375
7.5
nC
nC
ns
ns
ns
nC
A
3/8
Loading...