SGS Thomson Microelectronics STN749 Datasheet
®
MEDIUM CURRENT, HIGH PERFORMANCE,
LOW VOLTAGE PNP TRANSISTOR
Ordering Code Marking
STN749 N749
■ VERY LOW CO LLECT O R TO EMITTER
SATURATION VOLTAGE
■ DC CURRENT GAIN, h
■ 3 A CONTINUOUS COLLECTOR CURRENT
■ SOT-223 PLASTIC PAC KA GE FOR
SURFACE MOUNTING CIRCUITS
■ AVAILABLE IN TAPE AND REEL PACKING
> 100
FE
STN749
2
3
2
1
APPLICATIONS
■ POWER MANAGEMENT IN PORTABLE
SOT-223
EQUIPMENT
■ VOLTAGE REGULATION IN BIAS SUPPLY
CIRCUITS
■ SWITCHING RE G ULATOR IN BATTER Y
CHARGER APPLICATIONS
■ HEAVY LOAD DRIVER
INTER NAL SCH E M ATI C DIAG RA M
DESCRIPTION
The device is manufactured in low voltage PNP
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -35 V
CBO
Collector-Emitter Voltage (IB = 0) -25 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -3 A
I
C
Collector Peak Current (tp < 5 ms) -6 A
CM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
= 25 oC 1.6 W
amb
o
C
o
C
March 2003
1/6
STN749
THERMAL DATA
R
• Thermal Resistance Junction-Ambient Max 78
thj-amb
• Device mounted on a PCB area of 1 cm2 .
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -30 V
V
CB
V
= -30 V Tj = 100 oC
CB
= -4 V -100 nA
V
EB
I
= -10 mA -25 V
C
-100
-10
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -100 µA
I
C
-35 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -100 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
IC = -1A IB = -100 mA
I
= -3A IB = -300 mA
C
-0.3
-0.6
IC = -1 A IB = -100 mA -1.25 V
Saturation Voltage
V
BE(on)
Base-Emitter Turn-On
IC = -1 A VCE = -2 V -1 V
Voltage
∗ DC Current Gain IC = -50 mA VCE = -2 V
h
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
I
= -1 A VCE = -2 V
C
I
= -2 A VCE = -2 V
C
I
= -6 A VCE = -2V
C
70
100
75
15
300
nA
µA
V
V
2/6
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