SGS Thomson Microelectronics STN3PF06 Datasheet
STN3PF06
P-CHANNEL 60V - 0.18Ω - 3A SOT-223
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE V
STN3PF06 60V <0.20
■ TYPICAL R
■ EXCEPTIONAL dv/d t CAPABILITY
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
DS
DSS
(on) = 0.18Ω
R
DS(on)
I
D
Ω
2.5A
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size
™” strip-
based process. The resulting transistor shows extremely high packing density for low on-resistance,
rugged avalance characteristics and less critical
alignment steps therefore a remarkable manuf acturing reproducibility.
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ DC MOTOR CONTROL (DISK DRIVES, etc.)
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Note: Fo r the P-CH ANNEL MOSFET actual pol oari ty of Volta ges an d
current has to be rever sed
January 2001
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ±20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 10 A
Total Dissipation at TC = 25°C
Derating Factor 0.02 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V
60 V
60 V
2.5 A
1.5 A
2.5 W
(BR)DSS
, Tj ≤ T
JMAX.
1/6
STN3PF06
THERMA L D ATA
Rthj-pcb Thermal Resistance Junction-PC Board Max 50 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max
(Surface Mounted)
T
l
Maximum Lead Temperature For Soldering Purpose 260 °C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 60 V
= Max Rating
V
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 1.25 A
60 °C/W
1µA
10 µA
24V
0.18 0.20
Ω
I
D(on)
On State Drain Current VDS > I
V
GS
D(on)
=10V
x R
DS(on)max,
2.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
> I
V
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 230 pF
Reverse Transfer
Capacitance
DS
I
=1.25 A
D
V
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
1.5 S
850 pF
75 pF
2/6
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