SGS Thomson Microelectronics STN3NF06 Datasheet
STN3NF06
N-CHANNEL 60V - 0.07Ω - 4A SOT-223
STripFET™ II POWER MOSFET
TYPE
V
DSS
STN3NF06 60 V < 0.1
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ 100% AVALANCHE TESTED
■ AVALANCHE RUGGED TECHNOLOGY
(on) = 0.07 Ω
DS
R
DS(on)
I
D
Ω
4 A
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC-DC & DC-AC COVERTERS
■ DC MOTOR CONTROL (DISK DRIVERS, etc.)
■ SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse width l i mited by safe operating area. (1) ISD ≤4A, di/dt ≤150A/µs , VDD ≤ V
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C
4A
2.9 A
3.3 W
Derating Factor 0.026 W/°C
(1)
Peak Diode Recovery voltage slope 10 V/ns
(2)
Single Pulse Avalanche Energy 200 mJ
Storage Temperature
Operating Junction Temperature
(2) Starting Tj = 25 oC, ID = 4A, VDD = 30V
-55 to 150 °C
(BR)DSS
, Tj ≤ T
JMAX
1/8December 2002
STN3NF06
Note: 1. THERMAL DATA
Rthj-pcb
Rthj-pcb
T
(*) When Mounted on FR-4 board with 1 inch
(**) When Mounted on minimum recommended footprint
Thermal Resistance Junction-PCB (*)
Thermal Resistance Junction-PCB (**)
Maximum Lead Temperature For Soldering Purpose
l
(for 10 sec. 1.6 mm from case)
2
pad, 2 oz of Cu a nd t [ 10 sec
Max
Max
Typ
38
100
260
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 20V
GS
1
10
±100 nA
ON
(1)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS I
DS
V
= 10 V ID = 1.5 A
GS
= 250 µA
D
234V
0.07 0.10
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID = 1.5A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
3S
315
70
30
V
µA
µA
Ω
pF
pF
pF
2/8
STN3NF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 1.5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 48V ID = 3A V
V
DD
GS
= 10V
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 1.5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 4 A VGS = 0
SD
= 4 A di/dt = 100A/µs
I
SD
V
= 25 V Tj = 150°C
DD
(see test circuit, Figure 5)
7
18
10
3.5
3.5
17
6
50
88
3.5
13 nC
4
16
1.3 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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