SGS Thomson Microelectronics STN3NE06 Datasheet
STN3NE06
N - CHANNEL 60V - 0.08Ω - 3A - SOT-223
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STN3NE06 60 V < 0.100 Ω 3A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ AVALANCHERUGGEDTECHNOLOGY
■ 100 % AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
=0.08 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” stip-based process. The resultingtransistor showsextremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL (DISKDRIVES,etc.)
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤ 12 A, di/dt≤ 200 A/µs, VDD≤ V
New RDS (on) spec. starting from JULY 98
August 1998
Drain-sou rc e Volt ag e (VGS=0) 60 V
DS
DGR Drain- gate Voltage (R
Gate- source Voltage ± 20 V
GS
Drain Curre n t (continuous ) at Tc=25oC3A
I
D
I
Drain Curre n t (continuous ) at Tc=100oC 1.8 A
D
=20kΩ)
GS
60 V
(•) Drain Current (pulsed) 12 A
Total Dissipation at Tc=25oC 2.5 W
tot
Derating Fac tor 0.02 W/
1) Peak Diode Re covery volt age s lope 6 V/ns
St orage Te m peratu re -65 to 15 0
stg
Max. Operatin g Ju nction Tempe rature 150
T
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/9
STN3NE06
THERMAL DATA
R
thj-pcb
R
thj- amb
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Valu e Uni t
I
AR
E
Ther mal Resist ance Junctio n- PC Board Max
Ther mal Resist ance Junctio n- ambient Max
(Sur f a ce M ounted)
Maximum Lead T em per a t ure For Soldering P urpose
l
Avalanch e C ur rent, R ep et it i v e o r Not- Re petit ive
(pulse w idth limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
50
60
260
3A
20 mJ
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
(BR)DSS
Drain-sou rc e
=250µAVGS=0
I
D
60 V
Breakdown Voltage
I
I
DSS
GSS
Zer o G at e Voltage
Drain Curre nt ( V
GS
Gat e-body Le ak a ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125
V
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce O n
VGS=10V ID= 6A 0.080 0.100 Ω
Resistance
I
D(on)
On S tate Dra in Curr e nt VDS>I
D(on)xRDS(on)max
3A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Un it
g
(∗)Forward
fs
Tr anscond uctanc e
C
C
C
Input Ca pac i t an c e
iss
Out put C apa c itanc e
oss
Reverse T ransfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=1.5A 1 3 S
VDS=25V f=1MHz VGS= 0 V 760
100
30
1000
140
45
µA
µA
pF
pF
pF
2/9
STN3NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
d(on)
Q
Q
Q
Turn-on Tim e
Rise T ime
t
r
Total Gate Charge
g
Gat e-Sou rc e Charge
gs
Gate-Drain Charge
gd
VDD=30V ID=6A
=4.7 Ω VGS=10V
R
G
VDD=40V ID=12A VGS=10V 20
10
35
5
7
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
r(Voff)
t
t
Of f - voltag e Ris e Time
Fall Time
f
Cross-over Time
c
VDD=48V ID=12A
=4.7W VGS=10V
R
G
7
18
30
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Un it
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Cu rrent
(•)
Source-drain Cu rrent
(pulsed)
(∗) F orwar d O n V o lt age ISD=3A VGS=0 1.5 V
Reverse R ecovery
rr
Time
Reverse R ecovery
rr
= 12 A di/dt = 100 A/µs
I
SD
=30V Tj=150oC
V
DD
65
0.18
Charge
Reverse R ecovery
5.5
Current
15
50
25 nC
10
25
45
3
12
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/9
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