SGS Thomson Microelectronics STN2NE10L Datasheet
STN2NE10L
N-CHANNEL 100V - 0.33Ω - 2A SOT-223
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST N2NE10L 100 V < 0. 4 Ω 1.8 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ AVALANCHERUGGEDTECHNOLOGY
■ 100 % AVALANCHETESTED
■ LOW THRESHOLDDRIVE
DS(on)
= 0.33 Ω
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” stip-based process. The resulting transistor shows extremely high packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL(DISK DRIVES,etc.)
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUSRECTIFICATION
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
T
(•) Pulse width limited by safe operating area (1)ISD≤ 7.2 A, di/dt ≤ 200 A/µs,VDD≤ V
March 2000
Drain-source Voltage (VGS= 0) 100 V
DS
Drain- gate Volt age (RGS=20kΩ) 100 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous ) at Tc=25oC1.8A
I
D
Drain Current (continuous ) at Tc=100oC1.3A
I
D
(•) Drain Current (pulsed) 7.2 A
Total Dissipation at Tc=25oC2.5W
tot
Derat ing Factor 0.02 W/
) Peak Diode Re c overy volt age s lope 6 V/ns
1
Sto rage Temperature -65 t o 150
stg
Max. Operating Junct ion Temperat ur e 150
T
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STN2NE10L
THERMAL DATA
R
thj-pcb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-PC Board Max
Ther mal Resistanc e Junct ion-ambient Max
(Surface Mounted)
Maximum Lead Te m perature For Soldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
50
60
260
1.8 A
20 mJ
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.72.5V
Sta t ic Dr ain -s ource On
Resistance
VGS=10V ID=1A
=5V ID=1A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.33
0.38
1.8 A
0.4
0.45
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apac i t ance
iss
Out put Capacitanc e
oss
Reverse T r ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=1A 1 3 S
VDS=25V f=1MHz VGS= 0 V 345
45
20
µ
µA
Ω
Ω
pF
pF
pF
A
2/8
STN2NE10L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
Tur n-on Delay Time
Rise T i me
t
r
VDD=50V ID=3.5A
R
=4.7
G
Ω
VGS=5V
7
17
(Resis t iv e Load, see f ig. 3)
Q
Q
Q
Tot al G at e Char ge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=80V ID=7A VGS=5V 10
5
4
14 nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Delay Time
t
Fall T ime
f
VDD=80V ID=3.5A
R
G
=4.7
Ω
VGS=5V
22
8
(Resis t iv e Load, see f ig. 3)
t
r(Voff)
t
t
Off-volt age R ise Time
Fall T ime
f
Cross-over T ime
c
VDD=80V ID=7A
R
=4.7
G
Ω
VGS=5V
(Indu ct iv e L oad , see f ig . 5)
8
9
19
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
2
8
(pulsed)
(∗)ForwardOnVoltage ISD=2A VGS=0 1.5 V
Reverse Re covery
rr
Time
Reverse Re covery
rr
ISD= 7 A di/dt = 100 A/µs
=30V TJ=150oC
V
DD
(see test circuit, fig. 5)
75
190
Charge
Reverse Re covery
5
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/8
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