SGS Thomson Microelectronics STN1NF10 Datasheet
STN1NF10
N-CHANNEL 100V - 0.7Ω - 1A SOT-223
STripFET™ II POWER MOSFET
TYPE
V
DSS
STN1NF10 100 V < 0.8
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
(on) = 0.7 Ω
DS
R
DS(on)
I
D
Ω
1 A
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC-DC CONVERTERS
■ DC MOTOR CONTROL (DISK DRIVERS, etc.)
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse width l i mited by safe operating area. (1) ISD ≤ 1A, di/dt ≤350A/µs , VDD ≤ V
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
100 V
100 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
•)
Drain Current (pulsed) 4 A
Total Dissipation at TC = 25°C
1A
0.6 A
2.5 W
Derating Factor 0.02 W/°C
(1)
Peak Diode Recovery voltage slope 20 V/ns
(2)
Single Pulse Avalanche Energy 35 mJ
Storage Temperature
Max. Operating Junction Temperature
(2) Starting Tj = 25 oC, ID = 1A, VDD = 70V
-55 to 150 °C
(BR)DSS
, Tj ≤ T
JMAX
1/8October 2001
STN1NF10
THERMA L D ATA
Rthj-pcb
Rthj-pcb
T
Thermal Resistance Junction-PCB(1 inch2 copper board)
Thermal Resistance Junction-PCB (min. footprint)
Maximum Lead Temperature For Soldering Purpose
l
50
90
260
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 20V
GS
100 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS I
DS
V
= 10 V ID = 0.5 A
GS
= 250 µA
D
234V
0.7 0.8
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID = 1 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
1S
105
20
9
µA
µA
Ω
pF
pF
pF
2/8
STN1NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 0.5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 50 V ID= 1 A VGS= 10 V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 0.5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 1 A VGS = 0
SD
= 1 A di/dt = 100A/µs
I
SD
V
= 20 V Tj = 150°C
DD
(see test circuit, Figure 5)
4
5.5
4
1
1.5
13
6.5
45
60
2.7
6nC
1
4
1.2 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Saf e Oper ating Area
Thermal Impedance
3/8
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