SGS Thomson Microelectronics STN1NC60 Datasheet
STN1NC60
N-CHANNEL 600V - 12Ω - 0.3A - SOT-223
PowerMesh™II MOSFET
TYPE V
STN1NC60 600 V <15
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
(on) = 12Ω
R
DS(on)
I
D
Ω
0.3 A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ AC ADAPTORS AND BATTERY CHAR GE R S
■ SWITH MODE POWER SUPPLI ES ( SMPS)
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 3 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operat i ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(1)
Drain Current (pulsed) 1.2 A
Total Dissipation at TC = 25°C
Derating Factor 0.02 W/°C
Storage Temperature –60 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤0.3A, di/ dt ≤100A/µs, VDD ≤ V
600 V
600 V
0.3 A
0.18 A
2.5 W
(BR)DSS
, Tj ≤ T
JMAX
1/8February 2001
STN1NC60
THERMA L D ATA
Rthj-pcb
Rthj-amb
Thermal Resistance Junction-PC Board
Thermal Resistance Junction-ambient Max
(Surface Mounted)
T
l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
ID = 250 µA, VGS = 0 600 V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
50
60
260
0.3 A
60 mJ
1µA
50 µA
°C/W
°C/W
°C
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID =0.5 A
234V
12 15
Resistance
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max,
1A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 18 pF
Reverse Transfer
Capacitance
ID= 0.5A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
0.87 S
108 pF
2.5 pF
Ω
2/8
STN1NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge 3.4 nC
Gate-Drain Charge 2.5 nC
= 300V, ID = 0.5A
V
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 480V, ID = 1A,
DD
VGS = 10V
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time 11 ns
Cross-over Time 43 ns
V
= 480V, ID = 1A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 0.3 A
(2)
Source-drain Current (pulsed) 1.2 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 720 µC
ISD = 0.3 A, VGS = 0
I
= 1A, di/dt = 100A/µs,
SD
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
Reverse Recovery Current 3.2 A
7.2
8
7.3 10 nC
33 ns
1.6 V
450 ns
ns
ns
Ther m al Imp e danceSafe Operating Area
3/8
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