SGS Thomson Microelectronics STM1645-30 Datasheet

SATELLITE COMMUNICATION APPLICATIONS
CLASSC SATELLITECOMMUNICATIONS
AMPLIFIER
1625-1665 MHz
12/28VOLTS
INPUT/OUTPUT 50 OHMS
GAIN = 34.8 dB MIN.
DESCRIPTION
The STM1645-30 hybrid RF Power Module is designed for high power satellite communication applicationsin the1.6 GHz frequencyrange.
High f devices, optimized for use in STM1645-30, are employed to provide high gain and efficiency while ensuring excellent reliability.
, gold metallized silicon microwave power
T
RF POWER MODULE
ORDER CODE :
STM1645-30
PIN CONNECTIONS
STM1645-30
BRANDING:
STM1645-30
1. RF Input 2. Ground 3. V 28V 6. Ground 7. R F Outp u t
5. V
C3
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V DC Supp ly Volta ge 30 Vdc
P
T
T
October 1999
RF Inpu t Power (P
IN
Sto rage Tem peratu re R ange - 40 to + 100
STG
Oper a t ing Case Te mperat ur e -35 to + 70
C
OUT
30 W)
case
=25oC)
20 mW
12V 4. VC228V
C1
o
C
o
C
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STM1645-30
ELECTRICAL SPECIFICATION
(T
case
=25oC, V
=12V;V
C1*
C2,VC3
=28V)
Symbol Parameter Test Conditions Min. Typ. M ax Unit
BW Fr eque nc y Range 1625 1665 MHz
P
OUT
G
Power Output Power Gain P
P
η Efficiency P
Z
Input Imp eda nc e
IN
HHarmonics P
vs T
P
P
OUT OUT
CASE
vs Fr eq uen c y
Load Mi sm a t c h VSW R = 10:1 V = 28 Vdc
P
Control Range P
OUT
Sta bility P
Note : *V
= 12 V regulated ±1%
C1
** P
adjustedby varying V
OUT
C3
10 W
P
IN
= 30 W 34.8 35.5 dB
OUT
=30W 35 %
OUT
=30W ZG,ZL=50
P
OUT
= 30 W reference -45 -40 dB
OUT
TC=-35oCto+70oC@PIN=10mW 2 dB f = 1 625 - 166 5 MHz 1 dB
P
=30W
OUT
=30W 8 10 dB
OUT
= 5 to 30 W**
OUT
Load V SW R = 3:1 any phas e
30 35 40 W
1.5: 1 2:1 VSWR
No Degra dation in O utput
Power
All Spurious Outputs More
Than 60 dB B elow Ca rr ier
REF. 1015506I
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