SGS Thomson Microelectronics STL35NF10 Datasheet
STL35NF10
N-CHANNEL 100V - 0.025Ω - 35A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
TYPE V
STL35NF10 100 V < 0.030 Ω 35 A
■ TYPICAL R
■ IMPROVED DIE-TO-FOOTPRINT RATIO
■ VERY LOW PROFILE PACKAGE
(on) = 0.025Ω
DS
DSS
R
DS(on)
I
D
DESCRIPTION
This Power MOSFET is t he second generation of
STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in
board space without compromising performance.
APPLICATIONS
■ HIGH EFFICIENCY ISOLATED DC/DC
CONVETERS
PowerFLA T™(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
August 2001
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 140 A
Total Dissipation at TC = 25°C
Derating Factor 0.64 W/°C
(1)
Single Pulse Avalanche Energy 135 mJ
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature –55 to 150 °C
100 V
100 V
35
22
80 W
(1) Start i ng Tj = 25°C, ID = 35A, VDD = 50V
A
A
1/6
STL35NF10
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 50 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ON
I
I
GSS
(1)
DSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 100 V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10 V, ID = 17.5 A
2 2.8 4 V
0.025 0.030 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS =20 V, ID= 15 A 18 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 265 pF
Reverse Transfer
Capacitance
V
= 25 V, f = 1 MHz, VGS = 0
DS
1780 pF
162 pF
2/6
Loading...