SGS Thomson Microelectronics STL34NF06 Datasheet
STL34NF06
N-CHANNEL 60V - 0.024Ω -34APowerFLAT™
LOW GATE CHARGE STripFET™II MOSFET
PRELIMINARY DATA
TYPE V
STL34NF06 60 V < 0.028Ω 34 A
TYPICAL RDS(on) = 0.024Ω
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
DSS
R
DS(on)
I
D
DESCRIPTION
This Power MOSFET is t he s ec ond generation of
STMicroelectronics unique “STripFET™” tec hnology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allow a significant reduction in
board space without compramising performance.
APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
PowerFLAT™(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGR AM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
DM
P
TOT
E
AS
T
stg
T
j
(•)Pulse width limited by safe operating area
(*) Current Limited by Wire Bonding is 20A
November 2002
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC= 25°C (*)
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 136 A
Total Dissipation at TC= 25°C
Derating Factor 0.56 W/°C
(1)
Single Pulse Avalanche Energy 250 mJ
Storage Temperature
Max. Operating Junction Temperature
(1) Starting Tj=25°C,ID=17A,VDD= 42V
60 V
60 V
34
20
70 W
–55 to 150 °C
A
A
1/6
STL34NF06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.8 °C/W
Rthj-pcb (#) Thermal Resistance Junction-ambient Max 31.2 °C/W
(*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 60 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID=17A
= 250µA
2V
0.024 0.028 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=30V,ID= 17 A TBD S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 225 pF
Reverse Transfer
Capacitance
1. Pulsed:Pulse duration = 300 µs, duty cycle1.5%.
V
=25V,f=1MHz,VGS=0
DS
920 pF
80 pF
2/6
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