SGS Thomson Microelectronics STL28NF3LL Datasheet
STL28NF3LL
N-CHANNEL 30V - 0.0055Ω -28APowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
TYPE V
STL28NF3LL 30 V < 0.0065 Ω 28 A
■ TYPICAL R
■ IMPROVED DIE-TO-FOOTPRINT RATIO
■ VERY LOW PROFILE PACKAGE
DS
DSS
(on) = 0.0055Ω
R
DS(on)
I
D
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “ STripFET™” technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in
board space without compromising performance.
APPLICATIONS
■ DC-DC CONVERTERS
PowerFLAT™(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(#) Drain Current (continuos) at TC= 25°C
D
I
DM
P
TOT
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
November 2002
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 16 V
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 112 A
Total Dissipation at TC= 25°C
Derating Factor 0.64 W/°C
(1)
Single Pulse Avalanche Energy 2 J
Storage Temperature
Max. Operating Junction Temperature
(1) Starting Tj= 25°C, ID= 14A, VDD=18V
30 V
30 V
28
17.5
80 W
–55 to 150 °C
A
A
1/6
STL28NF3LL
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W
Rthj-pcb (#) Thermal Resistance Junction-ambient Max 31.2 °C/W
(*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID= 250 µA, VGS= 0 30 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 16V ±100 nA
GS
V
DS=VGS,ID
VGS=10V,ID=14A
= 4.5 V, ID= 14A
V
GS
= 250µA
1V
0.0055 0.0065 Ω
0.0065 0.0095 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=14A 32 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 890 pF
Reverse Transfer
Capacitance
V
=25V,f=1MHz,VGS=0
DS
2780 pF
195 pF
2/6
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