SGS Thomson Microelectronics STL22NF10 Datasheet

STL22NF10

N-CHANNEL 100V - 0.055 Ω - 22A PowerF LAT™

LOW GATE CHARGE STripFET™ II MOSFET

TYPE

V

DSS

STL22NF10 100 V <0.060

■ TYPICAL R

■ IMPROVED DIE-TO-FOOTPRINT RATIO

■ VERY LOW PROFILE PACKAGE (1mm MAX)

■ VERY LOW THERMAL RESISTANCE

■ VERY LOW GATE CHARGE

(on) = 0.055 Ω

DS

R

DS(on)

I

D

22 A

(1)

Ω

DESCRIPTION

This application speci fic Power MOSFET is the second

generation of STMicroelectronis unique "STripFET™" technology. The resulting trans istor s hows extre mely l ow on-resistance and minimal gate charge. The new PowerFLAT™ pac kage allows a significant reduction in board space without compromising performance.

APPLICATIONS

■ HIGH-EFFICIENCY ISOLATED DC-DC

CONVERTERS

■ TELECOM AND AUTOMOTIVE

PowerFLAT™(5x5)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(2)

I

D

(2)

I

D

(3)

I

DM

(2)

P

tot

(1)

P

tot

dv/dt

E

AS

T

stg

T

j

.

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

100 V

100 V Gate- source Voltage ± 20 V Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C

5.3 A

3.8 A Drain Current (pulsed) 22 A Total Dissipation at TC = 25°C (Steady State) Total Dissipation at TC = 25°C

4W

70 W

Derating Factor 0.03 W/°C

(5)

Peak Diode Recovery voltage slope 16 V/ns

(6)

Single Pulse Avalanche Energy 82 mJ Storage Temperature Operating Junction Temperature

-55 to 150 °C

1/8February 2003

STL22NF10

THERMAL DATA

Rthj-F

Rthj-pcb(4)

(*)

Mounte d on F R-4 board (t [ 10 se c.)

(*)Thermal Resistance Junction-Foot (Drain) Thermal Operating Junction-pcb

1.8

31.5

°C/W °C/W

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

100 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20 V

GS

1

10

±100 nA

ON

(7)

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

= VGS I

DS

V

= 10 V ID = 11 A

GS

= 250 µA

D

2V

0.055 0.060

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(7)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

20 V ID= 11 A

DS =

= 25V, f = 1 MHz, VGS = 0

V

DS

16 S

885 130

56

µA µA

Ω

pF pF pF

2/8

STL22NF10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 11 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 80V ID= 22A VGS=10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 11 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(1)

The value is rated accordin g R

(2)

The value is rated accordin g R

(3)

Pulse width limited by safe operating area.

(4)

When Mount ed on FR-4 Board of 1 in ch², 2 oz Cu, t<10s.

(5)

ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V

(6)

Starting Tj = 25 oC, ID = 11 A, VDD = 30V.

(7)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Source-drain Current Source-drain Current (pulsed)

(7)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

thj-F thj-pcb

.

(BR)DSS

, Tj ≤ T

I

= 22 A VGS = 0

SD

=22 A di/dt = 100A/µs

I

SD

V

= 30 V Tj = 150°C

DD

(see test circuit, Figure 5)

.

JMAX

20 45

30

6

10

45 10

100 375

7.5

40 nC

5.3 22

1.3 V

ns ns

nC nC

ns ns

A A

ns

nC

A

Safe Operating Area

Thermal Impedance

3/8