SGS Thomson Microelectronics STK3NA60 Datasheet
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STK3NA60 600 V < 4 Ω 2.7 A
R
DS(on)
I
D
STK3NA60
PRELIMINARY DATA
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOW INTRINSIC CAPACITANCES
■ GATEGHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
=3.3 Ω
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
3
2
1
SOT82
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
DGR
V
I
DM
P
T
(•) Pulse width limited by safe operating area
March 1996
Drain-source Voltage (VGS= 0) 600 V
DS
Drain- gate Voltage (RGS=20kΩ) 600 V
Gate-sourc e Voltage ± 30 V
GS
I
Drain Current (c ont inuo us) a t Tc=25oC2.7A
D
I
Drain Current (c ont inuo us) a t Tc=100oC1.8A
D
(•) Drain Current (puls ed) 10.8 A
Total Dissipat i on at Tc=25oC60W
tot
Derat ing Factor 0.48 W/
Stora ge Temperatu re -65 to 150
stg
T
Max. Operat ing Junc t i on Temperatu r e 150
j
o
C
o
C
o
C
1/9
STK3NA60
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Val ue Uni t
I
AR
E
E
I
AR
Ther mal Resistance Junct ion-cas e Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Soldering Purpo se
l
Avalanche Current, Repetitiv e or Not-Repe t it ive
(pulse width lim i t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Av alanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width lim i t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current, Repetitiv e or Not-Repe t it ive
=100oC, p ulse width lim it ed by Tjmax, δ <1%)
(T
c
2.08
62.5
0.5
300
2.7 A
40 mJ
1.6 mJ
1.8 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAVGS= 0 600 V
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRatingx0.8 Tc= 125oC
DS
V
= ± 30 V ± 100 nA
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=VGSID=250µA2.2533.75V
St at ic Drain-source On
Resistance
VGS= 10V ID=1.5A
= 10V ID=1.5A Tc=100oC
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
2.9 A
3.3 4
8
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=1.5A 1 2 S
VDS=25V f=1MHz VGS= 0 380
57
17
500
75
23
Ω
Ω
pF
pF
pF
2/9
STK3NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=300V ID=1.5A
=18 Ω VGS=10V
R
G
(see test cir cuit, figure 3)
(di/dt)
Tur n-on C urr ent Slope VDD=400V ID=3A
on
R
=18 Ω VGS=10V
G
(see tes t circuit, f igure 5)
Q
Q
Q
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
VDD=480V ID=3A VGS=10V 22
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over T ime
c
VDD=480V ID=3A
=18 Ω VGS=10V
R
G
(see test cir cuit, figure 5)
SOURCE DRAIN DIODE
14
25
20
35
300 A/ µs
30 nC
6
9
13
24
12
18
34
17
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
2.7
10.8
(pulsed)
(∗)ForwardOnVoltage ISD=2.7A VGS=0 1.6 V
V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 3 A di/dt = 100 A/µs
=100V Tj=150oC
V
DD
(see test cir cuit, figure 5)
460
5.6
Charge
I
RRM
Reverse Recovery
24
Current
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area ThermalImpedance
A
A
ns
µC
A
3/9
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