SGS Thomson Microelectronics STK2NA60 Datasheet
STK2NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STK 2NA60 600 V < 8 Ω 1.9 A
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
= 7.2 Ω
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The optimized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
and gate charge, unequalled ruggedness
DS(on)
and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
2
3
2
1
1
SOT-82 SOT-194
(option)
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS= 0) 600 V
DS
Drain- gate Voltage (RGS=20kΩ) 600 V
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC1.9A
I
D
Drain Current (continuous) at Tc=100oC1.2A
I
D
(•) Drain Current (pulsed) 7.6 A
Total Di ssipation a t Tc=25oC50W
tot
Derat ing Factor 0.4 W/
St or a ge Tem perature -65 t o 150
stg
Max. Operating Jun ction T emperature 150
T
j
o
o
o
C
C
C
1/10
STK2NA60
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
l
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=50V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
2.5
80
0.7
275
1.9 A
18 mJ
0.7 mJ
1.2 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 600 V
Break d own Volta ge
I
DSS
I
GSS
Zer o G at e V oltage
Drain Current (V
GS
Gat e- body Leakage
=0)
=MaxRating
V
DS
V
= Max Rating x 0.8 Tc=125oC
DS
25
250
VGS= ± 30 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n
VGS=10V ID=1A 7.2 8 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
1.4 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1A 0.65 1.2 S
VDS=25V f=1MHz VGS=0 230
42
10
300
55
15
µA
µA
pF
pF
pF
2/10
STK2NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T ime
t
Rise Time
r
Turn-on Current S lope VDD=480V ID=2A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAINDIODE
VDD=300V ID=1A
RG=4.7 Ω VGS=10V
8
13
(see test circuit, figure 3)
180 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)
VDD= 480 V ID=2A VGS=10V 15
5
6
VDD=480V ID=2A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)
8
15
8
12
20
25 nC
12
25
12
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
1.9
7.6
(pulsed)
V
(∗) Forward On Voltage ISD=1.9A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=2A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
400
4
Charge
I
RRM
Reverse Recovery
20
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
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