SGS Thomson Microelectronics STK12N06L, STK12N05L Datasheet
STK12N05L
STK12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE V
STK 12N05L
STK 12N06L
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
o
■ 175
C OPERATING TEMPERATURE FOR
DS(on)
DSS
50 V
60 V
= 0.115 Ω
R
DS(on)
<0.15Ω
<0.15Ω
I
D
12 A
12 A
o
C
STANDARD PACKAGE
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
2
3
2
1
1
SOT-82 SOT-194
(option)
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STK 12N05L ST K12N06L
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 50 60 V
DS
Drain- gate Voltage (RGS=20kΩ)5060V
DGR
Gate-source Voltage ± 15 V
GS
Drain Current (continuous) at Tc=25oC12A
I
D
Drain Current (continuous) at Tc=100oC8A
I
D
(•) Drain Current (pulsed) 48 A
Total D i ssipation at Tc=25oC50W
tot
Derating F actor 0.33 W/
St or a ge Tem perature -65 to 175
stg
Max. Operating Junctio n Temperatur e 175
T
j
o
o
o
C
C
C
1/10
STK12N05L/STK12N06L
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
l
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
3
80
0.7
275
12 A
30 mJ
7mJ
8A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS=0
for STK12 N05L
for STK12 N06L5060
I
DSS
I
GSS
Zer o Gate Voltage
Drain Current (VGS=0)
Gat e- body Leakage
VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC
1
10
VGS= ± 15 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n
VGS=5 V ID=6A 0.115 0.15 Ω
Resistance
I
D(on)
On St ate Dra in Current VDS>I
D(on)xRDS(on)max
15 A
VGS=10 V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=6A 4 8 S
VDS=25V f=1MHz VGS=0 350
150
50
500
200
80
V
V
µA
µA
pF
pF
pF
2/10
STK12N05L/STK12N06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Turn-on C urrent Slope VDD=40V ID=12A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=25V ID=6A
RG=50 Ω VGS=5V
55
18080260
(see test circuit, figure 3)
120 A/µs
RG=50 Ω VGS=5V
(see test circuit, figure 5)
VDD=40V ID=12A VGS=5V 12
6
4
VDD=40V ID=12A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
40
60
110
18 nC
60
90
160
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
12
48
(pulsed)
V
(∗) F or w ar d On Volt age ISD=12A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD= 12 A di/dt = 100 A/µs
VDD=25V Tj=150oC
(see test circuit, figure 5)
75
0.15
Charge
I
RRM
Reverse Recovery
4
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas Thermal Impedance
A
A
ns
µC
A
3/10
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