SGS Thomson Microelectronics STHH2003CR Datasheet
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STTH2003CT/CG/CF/CR/CFP
August 2003 - Ed: 7D
HIGH FREQUENCY SECONDARY RECTIFIER
®
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB, I
2
PAK or D2PAK, this device is
especially intended for secondary rectification.
DESCRIPTION
■
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
■ ULTRA-FAST,SOFT AND NOISE-FREE
RECOVERY
■
INSULATED PACKAGES: ISOWATT220AB,
TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
300 V
I
F(RMS)
RMS forward current
30 A
I
F(AV)
Average forward
current δ = 0.5
TO-220AB / D2PAK /
I2PAK
Tc=140°C Per diode
Per device
10
20
A
ISOWATT220AB
Tc=125°C
TO-220FPAB
Tc=115°C
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal
110 A
I
RSM
Non repetitive avalanche current tp = 20 µs square
5A
T
stg
Storage temperature range
-65 + 175 °C
Tj
Maximum operating junction temperature
175 °C
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
I
F(AV)
2x10A
V
RRM
300 V
Tj (max) 175 °C
V
F
(max) 1 V
trr (max) 35 ns
MAJOR PRODUCT CHARACTERISTICS
A1
A2
K
D2PAK
STTH2003CG
A1
A2
K
TO-220AB
STTH2003CT
A1
A2
K
ISOWATT220AB
STTH2003CF
A1
A2
K
I2PAK
STTH2003CR
A1
A2
K
TO-220FPAB
STTH2003CFP
STTH2003CT/CG/CF/CR/CFP
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Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage
current
V
R
= 300 V Tj = 25°C
20 µA
Tj = 125°C
30 300
V
F
**
Forward voltage drop I
F
= 10 A Tj = 25°C
1.25 V
Tj = 125°C
0.85 1
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.75xI
F(AV)
+ 0.025 I
F2(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AB / D2PAK / I2PAK
Per diode 2.5 °C/W
Total 1.3
ISOWATT220AB
Per diode 3.9
Total 3.2
TO-220FPAB
Per diode 4.6
Total 4
R
th (c)
TO-220AB / D2PAK / I2PAK
Coupling 0.1
ISOWATT220AB
Coupling 2.5
TO-220FPAB
Coupling 3.5
THERMAL RESISTANCES
Symbol Tests conditions Min. Typ. Max. Unit
trr
I
F
= 0.5 A Irr= 0.25 A IR=1A Tj=25°C
25 ns
I
F
=1A dIF/dt=-50A/µsVR=30V
35
tfr
I
F
=10A dIF/dt = 100 A/µs
VFR=1.1xVFmax.
Tj=25°C
230 ns
V
FP
3.5 V
S
factor
Vcc = 200V IF=10A
dIF/dt = 200 A/µs
Tj = 125°C
0.3 -
I
RM
8A
RECOVERY CHARACTERISTICS
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STTH2003CT/CG/CF/CR/CFP
024681012
0
2
4
6
8
10
12
14
IF(av) (A)
P1(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Conduction losses versus average current
(per diode).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
1
10
100
200
VFM(V)
IFM(A)
Tj=125°C
Tj=25°C
Tj=75°C
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ
=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
/D
2
PAK/I2PAK).
0 50 100 150 200 250 300 350 400 450 500
0
20
40
60
80
100
trr(ns)
VR=200V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
0 50 100 150 200 250 300 350 400 450 500
0
2
4
6
8
10
12
14
16
dIF/dt(A/µs)
IRM(A)
VR=200V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4: Peak reverse recovery current versus
dI
F
/dt (90% confidence, per diode).
1E-2 1E-1 1E+0 1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
T
δ
=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB).
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