SGS Thomson Microelectronics STW9NA80, STH9NA80FI Datasheet
STW9NA80
STH9NA80FI
N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE V
STW9NA80
ST H9 NA80FI
■ TYPICALR
■ ± 30VGATETO SOURCEVOLTAGERATING
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHEDATA AT 100
■ LOW INTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
DSS
800 V
800 V
= 0.85 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
R
DS(on)
<1.0Ω
<1.0
Ω
I
D
9.1 A
5.9 A
o
C
3
2
1
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST W 9N A80 STH 9NA 80FI
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
November 1998
Drain-source Voltage (VGS=0) 800 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gate -sourc e Volta ge ± 30 V
GS
I
Drain C urrent (co ntinuous) at Tc=25oC9.15.9A
D
I
Drain C urrent (co ntinuous) at Tc=100oC63.9A
D
800 V
(•) Dra in Cur rent (pulsed) 36.4 36.4 A
Total Dissipation at Tc=25oC 190 80 W
tot
Der at in g Fac to r 1.52 0.64 W/
Insulat ion W ith stand Vo ltage (DC) 4000 V
ISO
St orage T empe r ature -65 t o 150
stg
T
Max. Op erating J unc t ion Tempe rat ure 150
j
o
o
o
C
C
C
1/10
STW9NA80-STH9NA80FI
THERMAL DATA
TO-247 ISOWATT 218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resistanc e Juncti on-case Max 0.65 1.56
Ther mal Resistanc e Juncti on-amb ien t Ma x
Thermal Resistance Case-sink Typ
Maximum Lead Temper at u r e Fo r Sold ering P urpose
l
Avalanche Cu rr ent, Repetitive or No t -Repet it iv e
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
30
0.1
300
9.1 A
415 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sou rc e
=250µAVGS=0
I
D
800 V
Break d own V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cu rr ent (V
GS
Gat e- b ody Le aka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=100oC
V
DS
=± 30 V
V
GS
50
500
± 100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250µA
2.25 3 3.75 V
Voltage
R
DS(on)
Static Drain-source On
VGS=10V ID= 4 .5 A 0.85 1 Ω
Resistance
I
D(on)
On S t ate D rain Cur rent VDS>I
D(on)xRDS(on)max
9.1 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr anscond uctance
C
C
C
Input Cap ac i t an c e
iss
Out put Capacita nc e
oss
Reverse Transf er
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=4.5A 7.5 10 S
VDS=25V f=1MHz VGS= 0 2900
290
80
3800
380
105
µ
µA
pF
pF
pF
A
2/10
STW9NA80-STH9NA80FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
t
r
Rise Time
VDD= 400 V ID=4.5A
=4.7 Ω VGS=10V
R
G
37
45
50
60
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e- Sour ce Char ge
gs
Gate-Drain Charge
gd
VDD= 640 V ID=9A VGS=10V 115
15
55
150 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage Rise Time
Fall Time
f
Cross-over Ti me
c
VDD= 640 V ID=9A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
45
15
70
60
20
91
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curr ent
(•)
Source-drain Curr ent
9.1
36.4
(pulsed)
(∗) For ward O n Voltage ISD=9.1A VGS=0 1.6 V
Reverse Reco v ery
rr
Time
Reverse Reco v ery
rr
= 9 A di/dt = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
765
113.4
Charge
Reverse Reco v ery
35
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for TO-247 SafeOperating Area for ISOWATT218
3/10
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