SGS Thomson Microelectronics STW9NA60, STH9NA60FI Datasheet
STW9NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STW9NA60
ST H9NA60FI
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHEDATA AT 100
■ LOW INTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGE SPREAD
DS(on)
DSS
600 V
600 V
= 0.69 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
R
DS(on)
<0.8Ω
<0.8Ω
I
D
9.5 A
6.4 A
o
C
STH9NA60FI
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
1
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW9NA60 ST H9NA 60FI
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
October 1998
Dra in- sour c e Volt age (VGS= 0) 600 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 600 V
DGR
Gat e-source Volt age
GS
I
Dra in Cu rr ent (contin uous ) a t Tc=25oC6.49.5A
D
I
Dra in Cu rr ent (contin uous ) a t Tc=100oC46A
D
30 V
±
(•) Dra in Cu rr ent (pulsed) 38 38 A
Tot al Dissipation at Tc=25oC70160W
tot
Der ati ng Fact or 0.56 1.28 W/
Insulation Withstand Voltage (DC) 4000 V
ISO
St orage Temperat ure -65 to 150
stg
T
Max. Operating Junct ion Temperat ure 150
j
o
o
o
C
C
C
1/10
STW9NA60-STH9NA60FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 0.78 1.78
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure F or S o ldering Purpos e
l
Avalanche C urrent, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max,δ <1%)
j
30
0.1
300
9.5 A
450 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 600 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
=± 30 V
GS
25
250
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA2.2533.75V
Sta t ic Drain-s our c e On
VGS=10V ID= 4.5A 0.69 0.8
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
9A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=4.5A 5 8.3 S
VDS=25V f=1MHz VGS= 0 1800
230
65
2350
300
85
µA
µA
Ω
pF
pF
pF
2/10
STW9NA60-STH9NA60FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=300V ID= 4.5 A
R
=4.7
G
Ω
VGS=10V
21
32
30
45
(see test circuit, figure 3)
(di/dt)
Tur n-on Current Slope VDD=480V ID=9A
on
R
G
=47
Ω
VGS=10V
180 A/ µ s
(see test circuit, figure 5)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 480 V ID=9A VGS=10V 75
11
36
100 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Tim e
Fall T ime
f
Cross-over Tim e
c
VDD=480V ID=9A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
16
18
26
23
25
35
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
9.5
38
(pulsed)
(∗)ForwardOnVoltage ISD=9.5A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 9. 5 A di/dt = 100 A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
660
12
Charge
Reverse Recovery
36
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
SafeOperating Area for TO-247 SafeOperating Area for ISOWATT218
3/10
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