SGS Thomson Microelectronics STH8NB90FI Datasheet

STW8NB90
STH8NB90FI
N-CHANNEL 900V - 1.1 - 8 A TO-24 7/ISO WATT218
PowerMesh™ MOSFET
TYPE V
DSS
R
DS(on)
I
D
STW8NB90 900 V < 1.45 8 A STH8NB90FI 900 V < 1.45 5 A
TYPICAL R
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPAC ITANCES
GATE CHARGE MINIMIZED
(on) = 1.1
DS
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi­nation structure, gives the lowest R
DS(on)
per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris­tics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLI ES ( SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW8NB90 STH8NB90FI
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limi te d by safe oper ating area
8 A, di/dt 200A/µs, VDD V
(1)I
SD
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k)
900 V 900 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C
()
Drain Current (pulsed) 32 20 A Total Dissipation at TC = 25°C
85A 53A
200 80 W
Derating Factor 1.6 0.64 W/°C
Insulation Withstand Voltage (DC) - 2500 V Storage Temperature –65 to 150 °C Max. Operating Junction Temperature 150 °C
, Tj T
(BR)DSS
JMAX.
1/9July 2001
STW8NB90 - STH8NB90FI
THERMA L D ATA
TO-247 ISOWATT218
Rthj-case Thermal Resistance Junction-case Max 0.625 1.56 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
max)
j
Single Pulse Avalanche Energy (starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 900 V
8A
700 mJ
Breakdown Voltage Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
A
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
= VGS, ID = 250 µA
DS
VGS = 10 V, ID = 4 A
345V
1.1 1.45
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance 225 pF Reverse Transfer
Capacitance
ID=4 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
8S
2120 pF
23 pF
2/9
STW8NB90 - STH8NB90FI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q Q Q
t
r
g gs gd
Turn-on Delay Time Rise Time 12 ns Total Gate Charge
Gate-Source Charge 12.5 nC Gate-Drain Charge 18 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time Fall Time 15 ns Cross-over Time 31 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 8 A
(2)
Source-drain Current (pulsed) 32 A Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge 6.3 µC Reverse Recovery Current 18 A
= 450 V, ID = 3.5 A
DD
RG= 4.7 VGS = 10 V (see test circuit, Figure 3)
V
= 400V, ID = 9A,
DD
VGS = 10V
V
= 720V, ID = 7.4 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 8 A, VGS = 0 I
= 7.4 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C (see test circuit, Figure 5)
25 ns
46 72 nC
22 ns
1.6 V
700 ns
Safe Operating Area for ISOWATT 218Safe Operating Area for TO-247
3/9
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