SGS Thomson Microelectronics STW7NA90, STH7NA90FI Datasheet
STW7NA90
STH7NA90FI
N - CHANNEL 900V - 1.05Ω - 7A - TO-247/ISOWATT218
FAST POWER MOSFET
TYPE V
STW7NA90
ST H7NA90FI
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT 100
■ LOW INTRINSICCAPACITANCE
■ GATECHARGE MINIMIZED
■ REDUCEDVOLTAGESPREAD
DS(on)
DSS
900 V
900 V
= 1.05 Ω
APPLICATIONS
■ HIGHCURRENT, HIGHSPEEDSWITCHING
■ SWITCHMODE POWER SUPPLY (SMPS)
■ CONSUMER ANDINDUSTRIALLIGHTING
■ DC-AC CONVERTERFOR WELDING
EQUIPMENTANDUNINTERRUPTABLE
POWERSUPPLY (UPS)
R
DS(on)
<1.3Ω
<
1.3 Ω
I
D
7A
4.7 A
o
C
3
2
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW7NA90 ST H7NA 90FI
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
October 1998
Dra in- sour c e Volt age (VGS= 0) 900 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 900 V
DGR
Gat e-source Volt age ± 30 V
GS
Dra in Cu rr ent (contin uous ) a t Tc=25oC74.7A
I
D
Dra in Cu rr ent (contin uous ) a t Tc=100oC43A
I
D
(•) Dra in Cu rr ent (pulsed) 30 30 A
Tot al Dissipation at Tc=25oC 190 70 W
tot
Der ati ng Fact or 1.52 0.56 W/
Insulation Withstand Voltage (DC) −−−−−− 40 00 V
ISO
St orage Temperat ure -65 to 150
stg
Max. Operating Junct ion Temperat ure 150
T
j
o
C
o
C
o
C
1/9
STW7NA90- STH7NA90FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 0.65 1.78
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e m pe ra t ure F or S o ldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
30
0.1
300
7A
700 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 900 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
=± 30 V
GS
50
500
100 nA
±
ON(∗)
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA2.2533.75V
Sta t ic Drain-s our c e On
VGS=10V ID= 3.5 A 1.05 1. 3
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
7A
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=3.5A 7 9 S
VDS=25V f=1MHz VGS= 0 3100
310
80
4000
380
105
µA
µA
Ω
pF
pF
pF
2/9
STW7NA90 - STH7NA90FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=450V ID=3.5A
R
=4.7
G
Ω
VGS=10V
40
41
54
63
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 720 V ID=7A VGS= 10 V 120
20
60
170 nC
SWITCHING OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Tim e
Fall T ime
f
Cross-over Tim e
c
VDD=720V ID=7A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
50
18
73
65
23
97
SOURCEDRAINDIODE
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
7
30
(pulsed)
(∗)ForwardOnVoltage ISD=7A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=7A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
830
13.8
Charge
Reverse Recovery
33
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for TO-247 SafeOperating Area for ISOWATT218
3/9
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