SGS Thomson Microelectronics STW7NA100, STH7NA100FI Datasheet
STW7NA100
STH7NA100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
STW7NA100
STH7NA100FI
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ GATE CHARGE MINIMISED
■ REDUCED THRESHOLD VO LT A GE SPREA D
DS(on)
DSS
1000 V
1000 V
= 1.45 Ω
R
DS(on)
< 1.7 Ω
< 1.7 Ω
I
D
7 A
4.3 A
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
1
TO-247 ISOWATT2 18
INTER NAL SCH E M ATI C DIAG RA M
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW7NA100 STH7NA100FI
V
V
V
IDM(•) Drain Cu rrent (pulsed) 28 28 A
P
V
T
(•) Pulse width limited by safe operating area
March 1998
DS
DGR
GS
I
D
I
D
tot
ISO
stg
T
j
Drain-source Voltage (VGS = 0) 1000 V
Drain- gate Voltage (RGS = 20 kΩ)
1000 V
Gate-source Voltage ± 30 V
Drain Current (continuous) at Tc = 25 oC 7 4.3 A
Drain Current (continuous) at Tc = 100 oC 4.4 2.7 A
Total Dissipation at Tc = 25 oC 190 70 W
Derating Factor 1.52 0.56 W/oC
Insulation Withstand Voltage (DC) 4000 V
Storage Temperature -65 to 150
Max. Operating Junction Temperature 150
o
C
o
C
1/6
STW7NA100-ST H7NA100FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Thermal Resistance Junction-case Max 0.65 1.78
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x, δ < 1%)
j
= 50 V)
DD
30
0.1
300
7A
800 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
1000 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100 oC
DS
V
= ± 30 V
GS
50
250
±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
2.25 3 3.75 V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 3.5 A 1.45 1.7 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
7A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 3.5 A 5 7 S
76
4100
351
99
= 0 3170
GS
270
µA
µA
Ω
pF
pF
pF
2/6
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