SGS Thomson Microelectronics STW6NA80, STH6NA80FI Datasheet

STW6NA80



STH6NA80FI

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218

FAST POWER MOS TRANSISTOR

TYPE V

STW6NA80 ST H6 NA80FI

■ TYPICALR

■ AVALANCERUGGED TECHNOLOGY

■ 100%AVALANCHETESTED

■ REPETITIVEAVALANCHEDATA AT 100

■ LOW GATE CHARGE

■ VERYHIGH CURRENTCAPABILITY

■ APPLICATIONORIENTED

DS(on)

DSS

800 V 800 V

= 1.8

CHARACTERIZATION

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAY DRIVERS

■ REGULATORS

■ DC-DC& DC-ACCONVERTERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVEENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

Ω

R

DS(on)

<2.2Ω <2.2

Ω

I

D

5.4 A

3.4 A

o

C

3

2

1

TO-247 ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST W 6N A80 STH 6NA 80FI

V

I

DM

P

V

T

(•) Pulsewidth limited by safeoperating area

October 1998

Drain-source Voltage (VGS=0) 800 V

DS

Dra in- gat e Voltage (RGS=20kΩ)

DGR

Gate -sourc e Vo ltage ± 30 V

GS

I

Drain Current (co ntinuous) at Tc=25oC5.4

D

I

Drain Current (co ntinuous) at Tc=100oC3.4

D

800 V

(•) Drain Current (pulsed) 22

Total Dissipation at Tc=25oC 150

tot

Derating Factor 1.2 Insulat ion Withstand Vo ltage (DC )  4000 V

ISO

St orage Temperature -65 t o 1 50

stg

T

Max. Op er a t ing J unction Tem pe rat ure 150

j

3.4

2.1 22 60

0.48

W/

A A A

W

o o

o

C

C C

1/10

STW6NA80-STH6NA80FI

THERMAL DATA

TO-247 ISOWAT T 218

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max V al ue Uni t

I

AR

E

I

AR

Ther mal Resist ance Junction- case Max 0.83 2.08 Ther mal Resist ance Junction- amb ient Max

Thermal Resistance Case-sink Typ Maximum Lead Tem perature For Soldering P urpose

l

Avalanche Curr ent, Re petitive or No t -Repetit ive (pulse width limited by T

Single Pulse Avalanche Energ y

AS

(starting T Repetitive Avalanche Energy

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by T

max, δ <1%)

j

max,δ <1%)

j

Avalanche Curr ent, Re petitive or No t -Repetit ive

= 100oC, pulse widt h limit ed by Tjmax, δ <1%)

(T

c

30

0.1

300

5.4 A

150 mJ

5.8 mJ

3.4 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

=250µAVGS=0

I

D

800 V

Break d own Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- b ody Le akage Current ( V

DS

=0)

V

=MaxRating

DS

=MaxRatingx0.8 Tc=100oC

V

DS

= ± 30 V

V

GS

25 50

± 100 nA

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250 µA

2.25 3 3.75 V

Voltage

R

DS(on)

I

D(on)

Static Drain-source On Resistance

VGS=10V ID=3A

=10V ID=3A Tc=100oC

V

GS

On S t ate Drain Current VDS>I

D(on)xRDS(on )max

5.4 A

1.8 2.2

4.4

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductance

C

Input Capacitance

iss

Out put Capacitanc e

oss

Reverse Transf er

rss

Capacitance

VDS>I

D(on)xRDS(on )maxID

=3A 3 5.5 S

VDS=25V f=1MHz VGS= 0 1250

140

35

1700

190

50

µA µA

Ω Ω

pF pF pF

2/10

STW6NA80-STH6NA80FI

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(on)

Turn-on Time

t

r

Rise Time

VDD= 400 V ID=3A

=4.7 Ω VGS=10V

R

G

40

10055135

(see test circu it, figure 3)

(di/dt)

Tur n-on Cu rr ent Slope VDD= 640 V ID=6A

on

=47 Ω VGS=10V

R

G

180 A/µs

(see test circu it, figure 5)

Q Q Q

Total Gate Charge

g

Gat e- Source Char ge

gs

Gate-Drain Charge

gd

VDD= 640 V ID=6A VGS=10V 55

8

24

75 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Ti me Fall Time

f

Cross-over T i m e

c

VDD= 640 V ID=6A

=47 Ω VGS=10V

R

G

(see test circu it, figure 5)

75 25

110

100

35

150

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5% (•) Pulse width limited by safeoperating area

Source-drain Curr ent

(•)

Source-drain Curr ent

5.4 22

(pulsed)

(∗) F orward On Volt age ISD=6A VGS=0 1.6 V

Reverse R ec o v ery

rr

Time Reverse R ec o v ery

rr

= 6 A di/dt = 100 A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see test circu it, figure 5)

800

15.2 Charge Reverse R ec o v ery

38

Current

ns ns

nC nC

ns ns ns

A A

ns

µC

A

SafeOperating Area for TO-247 SafeOperating Area for ISOWATT218

3/10