SGS Thomson Microelectronics STH6N100FI, STH6N100 Datasheet
STH6N100
STH6N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
STH6N100
STH6N100FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
DS(on)
DSS
1000 V
1000 V
= 1.75 Ω
R
DS(on)
<2Ω
<2Ω
I
D
6A
3.7 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
1
TO-218 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST H6N100 STH6N100
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
December 1996
Drain - s ource Voltage (VGS= 0) 1000 V
DS
Drain- gate Voltage (RGS=20kΩ) 1000 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC63.7A
I
D
Drain Current (continuous) at Tc=100oC3.7 2.3A
I
D
(•) Drain Current (pulsed) 24 24 A
Total Di ssipation at Tc=25oC 180 70 W
tot
Derat ing Factor 1.44 0.56 W/
Ins ulation Withs t and Voltage (DC) 4000 V
ISO
St or a ge Tem perature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
o
o
C
C
C
1/10
STH6N100/FI
THERMAL DATA
TO-218 ISOW ATT 218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e M ax 0.69 1.78
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
30
0.1
300
6A
850 mJ
16 mJ
3.7 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 1000 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
= ± 20 V ± 100 nA
V
GS
25
250
ON (∗)
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=3A 1.75 2 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
6A
VGS=10V
DYNAMIC
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=3A 4 5.5 S
VDS=25V f=1MHz VGS= 0 2150
260
105
2800
330
130
µA
µA
pF
pF
pF
2/10
STH6N100/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Turn-on C urrent S lope VDD=800V ID=6A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=500V ID=3A
RG=50 Ω VGS=10V
70
21090280
(see test circuit, figure 3)
180 A/µs
RG=50Ω VGS=10V
(see test circuit, figure 5)
VDD= 400 V ID=6A VGS=10V 125
15
55
VDD=800V ID=6A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
190
50
265
150 nC
250
65
345
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
6
24
(pulsed)
V
(∗) F or ward O n Voltage ISD=6A VGS=0 2 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
1100
31
Charge
I
RRM
Reverse Recovery
57
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-218 Safe Operating Areas For ISOWATT218
A
A
ns
µC
A
3/10
Loading...