SGS Thomson Microelectronics STH16NA40FI Datasheet
STW16NA40
®
STH16NA40FI
N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE V
STW16NA40
STH16NA40FI
■
TYPICAL R
■
AVALANCHE RUGG ED TECHNOLO GY
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100oC
■
APPLICATION ORIENTED
DS(on)
DSS
400 V
400V
= 0.21
CHARACTERIZATION
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
SWITCH MODE POWER SUPPLY (SMPS)
■
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
R
< 0.3 Ω
< 0.3 Ω
Ω
DS(on)
I
D
16 A
10 A
3
2
1
1
TO-247 ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STW16NA40 STH16NA40FI
400 V
400 V
± 30 V
-65 to 150
150
I
V
V
V
DM
P
Drain-source Voltage (VGS = 0)
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage
GS
I
Drain Current (continuous) at Tc = 25 oC
D
I
Drain Current (continuous) at Tc = 100 oC
D
(•)
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
tot
Derating Factor
V
T
(•) Pulse width limited by safe operating area
Insulation Withstand Voltage (DC)
ISO
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
October 1998
16 10 A
10 7 A
64 64 A
180 70 W
1.44 0.56 W/
4000 V
o
C
o
C
o
C
1/6
STW16NA40-STH16NA40FI
THERMAL DATA
TO-247 ISOWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
E
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
Repetitive Avalanche Energy
AR
= 25 oC, ID = IAR, V
j
(pulse width limited by T
max, δ < 1%)
j
DD
max, δ < 1%)
j
Avalanche Current, Repetitive or Not-Repetitive
= 100 oC, pulse width limited by Tj max, δ < 1%)
(T
c
= 50 V)
0.69 1.78
30
0.1
300
16 A
435 mJ
23 mJ
10 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
I
= 250 µA V
D
= Max Rating
V
DS
V
= Max Rating x 0.8 Tc = 100 oC
DS
= ± 30 V
V
GS
GS
= 0
400 V
25
250
±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
= VGS ID = 250 µA
V
DS
VGS = 10V ID = 8 A
V
= 10V ID = 8 A Tc = 100oC
GS
> I
V
DS
V
GS
D(on)
= 10 V
x R
DS(on)max
2.25 3 3.75 V
0.21 0.3
0.6
16 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
V
> I
DS
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 8 A
= 0
GS
912 S
2600
390
120
3500
540
160
µA
µA
Ω
Ω
pF
pF
pF
2/6
®
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