SGS Thomson Microelectronics STGW50NB60M Datasheet
STGW50NB60M
N-CHANNEL 50A - 600V -TO-247
PowerMESH™ IGBT
TYPE V
CES
V
CE(sat)(25°C)
I
C
STGW50NB60M 600 V < 1.9 V50A
■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ LOW GATE CHARG E
■ HIGH CURRENT CAPABILITY
CESAT
)
DESCRIPTION
Using the lat es t high voltage tech nology bas ed on a
patented strip l ay out, STMicroelectronics has designed an advanced family of IGBTs, the Power-
™
MESH
IGBTs, with outstanding performances .
The suffix "M" identifies a family optimized to
achieve very low s aturation on voltage for frequency
applications <10 KHz.
APPLICATIONS
■ MOTOR CONTROL
■ WELDING EQUIPMENTS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
ICM()
P
TOT
T
stg
T
j
Collector-Emitter Voltage (VGS=0)
600 V
Reverse Battery Protection 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
100 A
50 A
Collector Current (pulsed) 400 A
Total Dissipation at TC= 25°C
250 W
Derating Factor 2 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(●) Pulsewidthlimitedbysafeoperatingarea
1/9May 2003
STGW50NB60M
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.1 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC= 250 µA, VGE= 0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
VCE= Max Rating, TC= 125 °C
V
=±20V,VCE= 0 ± 100 nA
GE
10
100
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE=15V,IC=30A@25°C
=15V,IC=30A@100°C
V
GE
VGE=15V,IC=50A@25°C
V
=15V,IC=50A@100°C
GE
= 250 µA
345V
1.3
1.2
1.5
1.9
1.35
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
=15V,IC=18A
CE
=25V,f=1MHz,VGE=0
V
CE
= 480 V, IC=50A,
V
CE
V
=15V
GE
= 480 V , Tj = 125°C
clamp
=10Ω
R
G
22 S
4500
400
70
231
28
97
300 A
µA
µA
V
V
V
V
pF
pF
pF
nC
nC
nC
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
=480V,IC=50A
V
CC
=10Ω,VGE=15V
R
G
V
= 480 V, IC=50A
CC
R
=10 Ω , VGE=15V
G
Tj = 125°C
45
30
1600
800
2/9
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
ns
ns
A/µs
µJ
STGW50NB60M
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
E
ts
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time Vcc= 480 V, IC= 50 A 450 ns
)
Off Voltage Rise Time
)
Delay Time 410 ns
RGE=10Ω,VGE=15V
130 ns
Fall Time 300 ns
Turn-off Switching Loss 4 mJ
Total Switching Loss 4.1 mJ
Cross-over Time Vcc= 480 V, IC= 50 A 730 ns
)
Off Voltage Rise Time
)
Delay Time Tj = 125 °C 565 ns
RGE=10Ω,VGE=15V
265 ns
Fall Time 440 ns
Turn-off Switching Loss 6.6 mJ
Total Switching Loss 7.1 mJ
3/9
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