SGS Thomson Microelectronics STGW40NC60V Datasheet
STGW40NC60V
N-CHANNEL 50A - 600V TO-247
Hyper Fast PowerMESH™ IGBT
TYPE V
CES
V
CE(sat)
(Max)@25°C
I
C
@100°C
STGW40NC60V 600 V < 2.5 V50A
■ HIGH INPUT IMPEDANCE
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ VERY HIGH FREQUENCY OPERATION
■ CO-PACKAGEDWITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION
Using thelatest highvoltage t ec hnology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “V” identifies a family
optimized for high frequency welding and SMPS
applications.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■ WELDING
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGW40NC60V GW40NC60V TO-247 TUBE
1/9August 2003
STGW40NC60V
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
()Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.385 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
Collector-Emitter Voltage (VGS=0)
600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
()
Collector Current (pulsed) 220 A
Total Dissipation at TC= 25°C
80 A
50 A
260 W
Derating Factor 2.6 W/°C
Storage Temperature – 55 to 125 °C
Max. Operating Junction Temperature 125 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC=1mA,VGE= 0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
VCE= Max Rating, TC= 125 °C
V
=±20V,VCE= 0 ±250 nA
GE
250 µA
1000 µA
ON (1 )
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE=15V,IC=40A,Tj=25°C
VGE=15 V, IC= 40 A, Tj =125°C
= 250 µA
345V
1.92 2.5 V
1.7 V
2/9
STGW40NC60V
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 350 pF
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
Eon
r
Turn-on Delay Time
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
=25V,IC=20A
CE
V
= 25 V, f= 1 MHz, VGE=0
CE
= 480 V, IC=40A,
V
CE
=15V
V
GE
= 480 V , Tj = 125°C
clamp
RG=10Ω
=480V,IC=40A
V
CC
R
=10Ω,VGE=15V
G
VCC= 480 V, IC=40A
RG=10Ω, VGE=15V,
Tj =125°C
20 S
4550 pF
105 pF
220
30
105
220 A
45
27
1150
800
nC
nC
nC
ns
ns
A/µs
µJ
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
)
t
r(Voff
t
d(off
t
f
E
(**)
off
E
ts
t
r(Voff
t
d(off
t
f
(**)
E
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Off Voltage Rise Time
)
Delay Time 270 ns
Fall Time 70 ns
Turn-off Switching Loss 1120
Total Switching Loss 1880
)
Off Voltage Rise Time
)
Delay Time 325 ns
Fall Time 120 ns
Turn-off Switching Loss 1600
Total Switching Loss 2400
Vcc= 480 V, IC=40A,
R
=10Ω,VGE=15V
GE
TJ=25°C
Vcc= 480 V, IC=40A,
R
=10Ω,VGE=15V
GE
Tj = 125 °C
37 ns
67 ns
µJ
µJ
µJ
µJ
3/9
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