SGS Thomson Microelectronics STGW20NB60KD Datasheet
STGW20NB60KD
N-CHANNEL 20A - 600V -TO-247
SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE V
CES
V
CE(sat)
I
C
STGW20NB60KD 600 V < 2.8 V20A
■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ LOW ON-LOSSES
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ VERY HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ LATCH CURRENT FREE OPERA TION
cesat
)
DESCRIPTION
Using the latest h igh voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IG BTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor cont rol
applications with short circuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ U.P.S.
■ WELDING EQUIPMENTS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGW20NB60KD GW20NB60KD TO-247 TUBE
1/8August 2003
STGW20NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
Tsc Short Circuit Withstand 10
P
TOT
T
stg
T
j
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.83 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 50 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
I
CES
I
GES
Collector-Emitter Voltage (VGS=0)
600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
()
Collector Current (pulsed) 80 A
Total Dissipation at TC= 25°C
40 A
20 A
150 W
Derating Factor 1.2 W/°C
Storage Temperature
Max. Operating Junction Temperature
Collectro-Emitter Breakdown
IC= 250 µA, VGE= 0 600 V
–55to150 °C
Voltage
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
VCE= Max Rating, TC= 125 °C
V
=±20V,VCE= 0 ±100 nA
GE
10 µA
100 µA
µs
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE=15V,IC=20A
= 15V, IC= 20 A, Tj =125°C
V
GE
= 250µA
57V
2.3 2.8 V
1.9 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 190 pF
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
tscw Short Circuit Withstand Time V
2/8
=25V,IC=20 A
CE
V
=25V,f=1MHz,VGE=0
CE
= 480V, IC=20A,
V
CE
VGE=15V
= 0.5 BVces , VGE=15V,
ce
Tj = 125°C , R
=10Ω
G
8S
1560 pF
38 pF
85
115
14.4
51
10 µs
nC
nC
nC
STGW20NB60KD
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
t
(di/dt)
r
Turn-on Delay Time
Rise Time 36 ns
Turn-on Current Slope VCC= 480 V,IC=20ARG=10Ω
on
Eon Turn-on Switching Losses 650 µJ
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(V
t
E
tr(V
td(
E
t
d(off
t
off
E
t
t
off
E
c
off
f
(**)
ts
c
off
off
f
(**)
ts
Cross-over Time
)
Off Voltage Rise Time 25 ns
)
Delay Time 105 ns
Fall Time 95 ns
Turn-off Switching Loss 0.5 mJ
Total Switching Loss 0.6 mJ
Cross-over Time
)
Off Voltage Rise Time 46 ns
)
Delay Time 130 ns
Fall Time 150 ns
Turn-off Switching Loss 0.70 mJ
Total Switching Loss 1.05 mJ
=480V,IC=20A
CC
RG=10Ω,VGE=15V
VGE= 15 V,Tj = 125°C
V
= 480 V, IC=20A,
cc
=10Ω,VGE=15V
R
GE
V
= 480 V, IC=20A,
cc
=10Ω,VGE=15V
R
GE
Tj = 125 °C
40 ns
350 A/µs
130 ns
175 ns
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
f
Forward Current
Forward Current pulsed
Forward On-Voltage If=10A
If= 10 A, Tj = 125 °C
t
rr
Q
rr
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If=10A,VR=27V,
Tj =125°C, di/dt = 100A/µs
1.27
1
80.5
181
4.5
20
80
2.0
A
A
V
V
ns
nC
A
3/8
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