SGS Thomson Microelectronics STGW20NB60H Datasheet



STGW20NB60H

N-CHANNEL 20A - 600V TO-247

PowerMESH IGBT

TYPE V

CES

V

CE(sat)

I

C

ST G W20NB60H 600 V < 2 . 8 V 20 A

■ HIGHINPUT IMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP (V

■ LOW GATECHARGE

■ HIGHCURRENTCAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDETAIL CURRENT

CESAT

)

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequencyapplications(<120kHz).

APPLICATIONS

■ HIGHFREQUENCY MOTOR CONTROLS

■ WELDINGEQUIPMENTS

■ SMPSAND PFC IN BOTH HARDSWITCH

AND RESONANTTOPOLOGIES

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V V

V

I

CM

P

T

(•) Pulsewidth limited by safeoperating area

June 1999

Collect o r -Em i t t er Voltage (VGS= 0) 600 V

CES

Emit t er-Collect or Voltage 20 V

ECR

Gate-Emitter V oltage

GE

I

Collect o r Curr ent (continuous) at Tc=25oC40A

C

I

Collect o r Curr ent (continuous) at Tc= 100oC20A

C

20 V

±

(•) Collect o r Curr ent (pulsed) 160 A

Tot al Dissipat ion at Tc=25oC 150 W

tot

Derat ing Factor 1.2 W/ Sto rage Tem perature - 65 to 150

stg

T

Max. Operat ing Junc tion Tem per ature 150

j

o

C

o

C

o

C

1/8

STGW20NB60H

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-h

Ther mal Resistanc e Junction-case Max Ther mal Resistanc e Junction-ambient Max Ther mal Resistanc e C as e - heatsink Typ

0.83 30

0.1

o

C/W

oC/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Volt age

I

CES

GES

Collect o r cut - off

=0)

(V

GE

Gat e- Em i t t er Leakage Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

10

100

ON(∗)

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µ A35V

Voltage

V

CE(SAT)

Collector-Emitter Sat urat ion Volt age

VGE=15V IC=20A V

=15V IC=20A Tj= 125oC

GE

2.3

1.9

2.8 V

DYNAMIC

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

C

Q Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance Input Capacitanc e

ies

Out put Capacitance

oes

Reverse Transfer

res

Capacit a nc e Tot al Gate Charge

G

Gate-Emitt er C harge

GE

Gat e- Col lect or C har ge

GC

Latc hing Curr ent V

VCE=25 V IC=20A 7.0 10 S

VCE=25V f=1MHz VGE= 0 1200

140

VCE= 480 V IC=20A VGE= 15 V 110

28

1700

200

40

2200

260

52

145 nC 13 51

=480V RG=10 Ω

clamp

T

= 150oC

j

80 A

µA µ

V

pF pF pF

nC nC

A

SWITCHINGON

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

(di/dt)

2/8

t

d(on)

E

Delay Time

t

Rise Time

r

Tur n-on Current Slope

on

Turn-on

on

Switching Losses

VCC= 480 V IC=20A

=15V RG=10Ω

V

GE

VCC=480V IC=20A

=10Ω VGE=15V

R

G

T

=125oC

j

20 70

350 300

ns ns

A/µs

J

µ

STGW20NB60H

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

t

tr(v

t

d(off

E

off

E

t

tr(v

t

d(off

E

off

E

(•) Pulse width limited by max. junction temperature (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (**)Losses Include Also The Tail (Jedec Standardization)

Cross-Over Time

c

Off Voltage Rise Time

)

off

)

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss Tot al Switching Loss

ts

Cross-Over Time

c

)

Off Voltage Rise Time

off

)

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss Tot al Switching Loss

ts

VCC=480V IC=20A R

GE

=10

Ω

VGE=15V

VCC = 480 V IC=20A R

GE

= 125oC

T

j

=10

Ω

VGE=15V

115

32

170

75

0.4

0.65 190

55 210 140

0.7

1.0

ns ns ns

ns mJ mJ

ns

ns mJ mJ

ThermalImpedance

3/8