SGS Thomson Microelectronics STGW12NB60H Datasheet



N-CHANNEL 12A - 600V TO-247

TYPE V

CES

ST G W12NB6 0H 600 V < 2. 8 V 12 A

■ HIGHINPUTIMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP(V

■ LOW GATE CHARGE

■ HIGHCURRENT CAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDE TAIL CURRENT

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

APPLICATIONS

■ HIGHFREQUENCYMOTORCONTROLS

■ SMPSAND PFC IN BOTH HARD SWITCH

AND RESONANTTOPOLOGIES

V

CE(sat)

CESAT

I

C

)

STGW12NB60H

PowerMESH IGBT

PRELIMINARY DATA

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V V

V

I

CM

P

T

(•) Pulse width limitedby safe operatingarea

June 1999

Collect o r -Em i t t er Voltage (VGS= 0) 600 V

CES

Emit t er-Coll ect or Voltage 20 V

ECR

Gate-Emitter Voltage

GE

I

Collect o r Current (continuous) at Tc=25oC24A

C

I

Collect o r Current (continuous) at Tc= 100oC12A

C

20 V

±

(•) Collect o r Current (pulsed) 96 A

Tot al Diss i pat ion at Tc=25oC 120 W

tot

Derat ing Factor 0.96 W/ Sto rage Temperature -65 to 150

stg

T

Max. O perating Junction T emperature 150

j

o

C

o

C

o

C

1/8

STGW12NB60H

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-h

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambie nt Max Ther mal Resistanc e Case-heatsink Typ

1.04 30

0.1

o

C/W

oC/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

j

OFF

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n V o lt age

I

CES

GES

Collect o r cut- off

=0)

(V

GE

Gat e- Em i t t er Leak age Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

10

100

ON(∗)

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

V

GE(th)

Gate Threshold

VCE=VGEIC= 250 µA35V

Voltage

V

CE(SAT)

Collector-Emitter Sat urat ion Voltage

VGE=15V IC=12A V

=15V IC=12A Tj= 125oC

GE

2.0

1.7

2.8 V

DYNAMIC

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

C

Q Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance Input Capaci t anc e

ies

Out put Capac it ance

oes

Reverse Tr ansfer

res

Capacit a nc e Tot al Gate Charge

G

Gate-Emitt er Charge

GE

Gat e- Col lect or C harge

GC

Latc hing C urrent V

VCE=25 V IC=12A 9.5 S

VCE=25V f=1MHz VGE= 0 950

120

27

VCE= 480 V IC=12A VGE=15V 68

10 30

=480 RG=10 Ω

clamp

T

= 150oC

j

48 A

µA µ

V

pF pF pF

nC nC nC

A

SWITCHINGON

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

(di/dt)

2/8

t

d(on)

E

Delay T ime

t

Rise Tim e

r

Tur n-on Current Slope

on

Turn-on

on

Switching Losses

VCC= 480 V IC=12A

=15V RG=10Ω

V

GE

VCC=480V IC=12A

=10Ω VGE=15V

R

G

T

=125oC

j

5

46

1000

290

ns ns

A/µs

J

µ

STGW12NB60H

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

t

tr(v

t

d(off

E

off

E

t

tr(v

t

d(off

E

off

E

(•) Pulse width limited by max. junction temperature (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)

Cross-O ver Time

c

Off Voltage Rise Time

)

off

)

Delay T ime

t

Fall T ime

f

(**)

Turn-off Switching Loss Tot al Switching Los s

ts

Cross-O ver Time

c

)

Off Voltage Rise Time

off

)

Delay T ime

t

Fall T ime

f

(**)

Turn-off Switching Loss Tot al Switching Los s

ts

VCC=480V IC=12A R

GE

=10

Ω

VGE=15V

VCC=480V IC=12A R

GE

= 125oC

T

j

=10

Ω

VGE=15V

150

27 76 92

0.21

0.49 230

76 95

200

0.45

0.74

ns ns ns

ns mJ mJ

ns

ns mJ mJ

ThermalImpedance

3/8