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N-CHANNEL 12A - 600V TO-247
TYPE V
CES
ST G W12NB6 0H 600 V < 2. 8 V 12 A
■ HIGHINPUTIMPEDANCE
(VOLTAGEDRIVEN)
■ LOW ON-VOLTAGEDROP(V
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
■ VERYHIGH FREQUENCYOPERATION
■ OFFLOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
■ HIGHFREQUENCYMOTORCONTROLS
■ SMPSAND PFC IN BOTH HARD SWITCH
AND RESONANTTOPOLOGIES
V
CE(sat)
CESAT
I
C
)
STGW12NB60H
PowerMESH IGBT
PRELIMINARY DATA
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulse width limitedby safe operatingarea
June 1999
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
CES
Emit t er-Coll ect or Voltage 20 V
ECR
Gate-Emitter Voltage
GE
I
Collect o r Current (continuous) at Tc=25oC24A
C
I
Collect o r Current (continuous) at Tc= 100oC12A
C
20 V
±
(•) Collect o r Current (pulsed) 96 A
Tot al Diss i pat ion at Tc=25oC 120 W
tot
Derat ing Factor 0.96 W/
Sto rage Temperature -65 to 150
stg
T
Max. O perating Junction T emperature 150
j
o
C
o
C
o
C
1/8
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STGW12NB60H
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-h
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-heatsink Typ
1.04
30
0.1
o
C/W
oC/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
j
OFF
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n V o lt age
I
I
CES
GES
Collect o r cut- off
=0)
(V
GE
Gat e- Em i t t er Leak age
Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
ON(∗)
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
V
GE(th)
Gate Threshold
VCE=VGEIC= 250 µA35V
Voltage
V
CE(SAT)
Collector-Emitter
Sat urat ion Voltage
VGE=15V IC=12A
V
=15V IC=12A Tj= 125oC
GE
2.0
1.7
2.8 V
DYNAMIC
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
C
C
C
Q
Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Tr ansfer
res
Capacit a nc e
Tot al Gate Charge
G
Gate-Emitt er Charge
GE
Gat e- Col lect or C harge
GC
Latc hing C urrent V
VCE=25 V IC=12A 9.5 S
VCE=25V f=1MHz VGE= 0 950
120
27
VCE= 480 V IC=12A VGE=15V 68
10
30
=480 RG=10 Ω
clamp
T
= 150oC
j
48 A
µA
µ
V
pF
pF
pF
nC
nC
nC
A
SWITCHINGON
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
(di/dt)
2/8
t
d(on)
E
Delay T ime
t
Rise Tim e
r
Tur n-on Current Slope
on
Turn-on
on
Switching Losses
VCC= 480 V IC=12A
=15V RG=10Ω
V
GE
VCC=480V IC=12A
=10Ω VGE=15V
R
G
T
=125oC
j
5
46
1000
290
ns
ns
A/µs
J
µ
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STGW12NB60H
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Sym bol Param e t er Test Condition s Min . Typ. Max. Unit
t
tr(v
t
d(off
E
off
E
t
tr(v
t
d(off
E
off
E
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Cross-O ver Time
c
Off Voltage Rise Time
)
off
)
Delay T ime
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Los s
ts
Cross-O ver Time
c
)
Off Voltage Rise Time
off
)
Delay T ime
t
Fall T ime
f
(**)
Turn-off Switching Loss
Tot al Switching Los s
ts
VCC=480V IC=12A
R
GE
=10
Ω
VGE=15V
VCC=480V IC=12A
R
GE
= 125oC
T
j
=10
Ω
VGE=15V
150
27
76
92
0.21
0.49
230
76
95
200
0.45
0.74
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
ThermalImpedance
3/8