SGS Thomson Microelectronics STGP3NB60S Datasheet
STGP3NB60S
STGD3NB60S
N-CHANNEL 3A - 600V - TO-220 / DPAK
PowerMESH™ IGBT
TYPE V
STGP3NB60S
STGD3NB60S
■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)
■ VERY LOW ON-VO LTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ ADD SUFFIX “T4” FOR ORDERIN G IN TAPE &
CES
600 V
600 V
V
CE(sat)
<1.5 V
<1.5 V
cesat
I
C
3A
3A
)
REEL (SMD VERSION)
DESCRIPTION
Using the latest h igh voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a fam ily
optimized achieveminimum on-voltage drop for low
frequency applications (<1k Hz ).
APPLICATIONS
■ MOTOR CONTROL
■ LIGHT DIMMER
■ STATIC RELAYS
3
3
2
1
1
DPAK
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STGP3NB60S STGD3NB60S
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
Collector-Emitter Voltage (VGS=0)
600 V
Reverse Battery Protection 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC= 100°C
()
Collector Current (pulsed) 24 A
Total Dissipation at TC= 25°C
65 45 W
6A
3A
Derating Factor 0.32 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(●) Pulsewidthlimitedbysafeoperatingarea
1/10August 2002
STGP3NB60S - STGD3N B60S
THERMAL DATA
TO-220 DPAK
Rthj-case Thermal Resistance Junction-case Max 1.92 2.75 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
IC= 250 µA, VGE= 0 600 V
V
= Max Rating, TC=25°C
CE
= Max Rating, TC= 125 °C
V
CE
V
=±20V,VCE= 0 ±100 nA
GE
V
CE=VGE,IC
=15V,IC=3A
V
GE
=15V,IC=1A
V
GE
= 250µA
2.5 5 V
1.2
1
10 µA
100 µA
1.5 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 30 pF
Reverse Transfer
=25V,IC=3A
CE
V
=25V,f=1MHz,VGE=0
CE
1.7 2.5 S
255 pF
5.6 pF
Capacitance
Q
G
Q
GE
Q
GC
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
= 480 V, IC=3A,
V
CE
=15V
V
GE
= 480 V , Tj = 150°C
clamp
18
5.4
5.5
12 A
RG=1KΩ
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time 540 ns
Turn-on Current Slope
on
Turn-on Switching Losses
=480V,IC=3A
CC
=1KΩ,VGE=15V
R
G
= 480 V, IC= 3 A, RG=1KΩ
V
CC
VGE= 15 V, Tj = 125°C
170 ns
300
nC
nC
nC
A/µs
µJ
2/10
STGP3NB60S - ST GD 3N B 60S
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480 V, IC=3A,
t
c
tr(V
off
td(off)
t
f
E
(**)
off
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction t emperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Cross-over Time
)
Off Voltage Rise Time
)
Delay Time
Fall Time
Turn-off Switching Loss
V
cc
=1KΩ,VGE=15V
R
GE
= 480 V, IC=3A,
V
cc
RGE=1KΩ,VGE=15V,
Tj = 150°C
1.8
1.0
3.4
0.72
1.15
2.8
1.45
3.6
1.2
1.8
µs
µs
µs
µs
mJ
µs
µs
µs
µs
mJ
3/10
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