SGS Thomson Microelectronics STGP3NB60HDFP, STGP3NB60HD Datasheet

STGP3NB60HD



N-CHANNEL 3A - 600V TO-220/FP

TYPE V

ST G P3NB60HD ST G P3NB60HDFP

■ HIGHINPUT IMPEDANCE

CES

600 V 600 V

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP (V

■ LOW GATECHARGE

■ HIGHCURRENTCAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDETAIL CURRENT

■ CO-PACKAGEDWITH TURBOSWITCH

ANTIPARALLELDIODE

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequencyapplications(<120kHz).

V

CE(sat)

I

C

<2.8V <2.8V3A3A

)

cesat

STGP3NB60HDFP

PowerMESH IGBT

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHFREQUENCY MOTOR CONTROLS

■ SMPSAND PFC IN BOTH HARDSWITCH

AND RESONANTTOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Sym bol Parame t er Value Unit

STGP7NB60HD STGP7NB60HDF P

V

I

CM

P

T

(•) Pulse width limited by max. junction temperature

June 1999

Collec t or -Emitte r Volt age (VGS = 0) 600 600 V

CES

Gate-Emitter Voltage ± 20 ± 20 V

GE

Collec t or Curr e nt (contin uous) at Tc = 25oC6 6A

I

C

Collec t or Curr e nt (contin uous) at Tc = 100oC3 3 A

I

C

(•) Collec t or Curr e nt (pulsed) 24 24 A

Total Dissipation at Tc = 25oC7035W

tot

Derat i ng Fac t or 0.56 0. 28 W/ St orage Tem p er at u re -65 to 150

stg

Max. Operat ing Junct ion Temp er at u re 150

T

j

o

C

o

C

o

C

1/9

STGP3NB60HD/FP

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max 1.78 3.57 Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p

TO-220 TO- 220FP

62.5

0.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Volt age

I

CES

GES

Collect o r cut - off

=0)

(V

GE

Gat e- Em i t t er Leakage Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

= ± 20 V VCE=0 ±100 nA

V

GE

100

1000µAµA

ON(∗)

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µ A35V

Voltage

V

CE(SAT)

Collector-Emitter Sat urat ion Volt age

VGE=15V IC=3A

=15V IC=3A Tj=125oC

V

GE

2.4

1.9

2.8 V

DYNAMIC

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

C

Q Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance Input Capacitanc e

ies

Out put Capacitance

oes

Reverse Transfer

res

Capacit a nc e Tot al Gate Charge

G

Gate-Emitt er C harge

GE

Gat e- Col lect or C har ge

GC

Latc hing Curr ent V

VCE=25 V IC=3A 1.3 2.4 S

VCE=25V f=1MHz VGE= 0 160

23

4.5

VCE= 480 V IC=3A VGE=15V 21

235

33

6.6

300

43

8.6

27 nC

6

7.6

=480V RG=10Ω

clamp

T

= 150oC

j

12 A

V

pF pF pF

nC nC

SWITCHINGON

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

(di/dt)

2/9

t

d(on)

t

r

Eon(❍)

Delay Time Rise Time

Tur n-on Current Slope

on

Turn-on Switching Losses

VCC= 480 V IC=3A

=15V RG=10Ω

V

GE

V

=480V IC=3A

CC

=10Ω VGE=15V

R

G

T

=125oC

j

16 30

400

77

ns ns

A/µs

J

µ

STGP3NB60HD/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Sym bol Parame t er Test Conditions M in. Typ. Max. U nit

tr(v

t

E

tr(v

t

E

t

d(off

off

ts

t

d(off

off

ts

Cross-Over Time

c

Off Voltage Rise Time

)

off

)

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss

(❍)

Tot al Switching Loss Cross-Over Time

c

Off Voltage Rise Time

)

off

Delay Time

)

Fall T ime

t

f

Turn-off Switching Loss

(**)

(❍)

Tot al Switching Loss

V

=480V IC=3A

CC

R

=10

Ω

=480V IC=3A

=10

Ω

= 125oC

V R T

GE

CC GE j

VGE=15V

90 36 53 70 33

100 180

82 58

110

88

165

COLLECTOR-EMITTERDIODE

Sym bol Param e t er Tes t Conditions Min . Typ. Max. Unit

I

For ward Current

f

I

V

t

Q

I

rrm

(•) Pulse width limited by max. junction temperature (

❍) Include recovery lossess on the STTA306 freewheeling diode

(∗) Pulsed: Pulse duration= 300µs, duty cycle 1.5% (**)Losses Include Also The Tail (Jedec Standardization)

For ward Current pulsed

fm

For ward On- Voltage If=3A

f

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

Reverse Recovery Current

=3A Tj= 125oC

I

f

If=3A VR=200 V dI/dt = 100 A/µST

= 125oC

j

1.6

1.4 87

160

3.7

3

24

2.0 V

ns ns ns ns

µJ µ

ns ns ns ns

µ µ

J

J J

A A

V

ns

nC

A

ThermalImpedeanceFor TO-220 ThermalImpedeanceFor TO-220FP

3/9