SGS Thomson Microelectronics STGP20NB60K Datasheet
STGP20NB60K
N-CHANNEL 20A - 600V - TO-220
PowerMesh IGBT
PRELIMINARY DATA
TYPE V
CES
V
CE(sat)
I
C
STGP20NB60K 600 V < 2.8 V20A
■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ LOW ON-LOSSES
■ LOW GATECHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ VERY HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ LATCH CURRENT FREE OPERATION
cesat
)
DESCRIPTION
Using thelatest highvoltage technology basedon a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHIGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ U.P.S.
■ WELDING EQUIPMENTS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
Tsc Short Circuit Withstand 10
P
TOT
T
stg
T
j
June 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Collector-Emitter Voltage (VGS=0)
600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuos) at TC=25°C
Collector Current (continuos) at TC= 100°C
(■)
Collector Current (pulsed) 80 A
TotalDissipation at TC=25°C
40 A
20 A
125 W
Derating Factor 1 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
µs
1/6
STGP20NB60K
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
I
CES
I
GES
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Collectro-Emitter Breakdown
Voltage
Collector cut-off
(V
=0)
GE
Gate-Emitter Leakage
Current (V
CE
=0)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
I
= 250 µA, VGE=0
C
= Max Rating, TC=25°C
V
CE
V
= Max Rating, TC= 125 °C
CE
= ±20V , VCE=0
V
GE
V
CE=VGE,IC
V
= 15V, IC=20A
GE
V
=15V, IC= 20 A, Tj =125°C
GE
= 250µA
600 V
10 µA
100 µA
±100 nA
57V
2.3 2.8 V
1.9 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
twsc
Forward Transconductance
Input Capacitance
Output Capacitance 200 pF
Reverse Transfer
Capacitance
TotalGate Charge
Gate-Emitter Charge T.B.D. nC
Gate-Collector Charge T.B.D. nC
Short Circuit Withstand Time
V
=25V,IC=20 A
CE
= 25V, f = 1 MHz, VGE=0
V
CE
V
= 480V, IC=20A,
CE
= 15V
V
GE
V
= 0.5 BVces , VGE=15V,
ce
Tj = 125°C,R
=10Ω
G
8S
1300 pF
30 pF
90 nC
10 µs
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
Eon Turn-on Switching Losses 300 µJ
Turn-on Delay Time
Rise Time 70 ns
Turn-on Current Slope
on
V
= 480 V, IC=20A
CC
=10Ω,VGE=15V
R
G
V
= 480V, IC=20ARG=10Ω
CC
= 15 V,Tj= 125°C
V
GE
20 ns
350 A/µs
2/6
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