SGS Thomson Microelectronics STGP20NB37LZ Datasheet
STGP20NB37LZ
N-CHANNEL CLAMPED 20A TO-220
INTERNALLYCLAMPED PowerMESH
TYPE V
CES
ST G P20NB37L Z CLAMP ED < 2.0 V 20 A
■ POLYSILICONGATEVOLTAGE DRIVEN
■ LOW THRESHOLDVOLTAGE
■ LOW ON-VOLTAGEDROP
■ HIGHCURRENT CAPABILITY
■ HIGHVOLTAGECLAMPINGFEATURE
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstandingperformances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zenersuppliesan ESDprotection.
APPLICATIONS
■ AUTOMOTIVEIGNITION
V
CE(sat )
I
C
IGBT
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
E
P
E
T
(•) Pulse width limited by safe operating area
April 2000
Collector-Emitter Voltage (VGS=0) CLAMPED V
CES
Reverse Battery Protection 20 V
ECR
Gate-Emitter Voltage CLAMPED V
GE
I
Coll ect or Current (continu ous ) at Tc=25oC40A
C
I
Coll ect or Current (continu ous ) at Tc=100oC30A
C
(•) Coll ect or Current (pu lsed) 80 A
Single Pulse Energy T c = 25oC 700 mJ
AS
Tot al Diss ipa t ion at Tc=25oC 150 W
tot
Derating Facto r 1 W/
ESD (H uman Body Mo del) 4 KV
SD
St orage T emperat u re -65 to 175
stg
Max. Operat in g Junc t ion Tem p er at u r e 175
T
j
o
C
o
C
o
C
1/6
STGP20NB37LZ
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
1
62.5
0.2
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
BV
(CES)
(ECR)
Clamped Volt a ge IC=2mA VGE=0 TC=-40oC
I
=2mA VGE=0 TC=25oC
C
=2mA VGE=0 TC=150oC
I
C
Emitter C ollector
IC=75mA TC=25oC20 28 V
380
375
370
405
400
395
430
425
420
Break -down V olt ag e
BV
GE
Gate Emitter
IG=± 2mA 121416V
Break -down V olt ag e
I
CES
I
GES
Collect o r cut- off
Current (VG E = 0)
Gat e- Em i t t er Leak age
VCE=15V VGE=0 TC=150oC
= 200 V VGE=0 TC= 150oC
V
CE
VGE= ± 10 V VCE=0 ±300 ± 660 ± 1000 µA
10
100
Current (VCE = 0)
R
Gate Emitter Resistance 10 15 30 K
GE
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold
Voltage
Collector-Emitter
Sat urat ion Voltage
VCE=VGEIC= 250µATC=-40oC
V
CE=VGEIC
V
CE=VGEIC
= 250 µ ATC=25oC
= 250µATC=150oC
VGE=4.5V IC=10A TC=25oC
=4.5V IC=10A TC=150oC
V
GE
=4.5V IC=20A TC=25oC
V
GE
=4.5V IC=20A TC=150oC
V
GE
1.2
1.0
0.6
1.4 2
1.1
1.0
1.35
1.25
1.8
1.7
2.0
2.0
V
V
V
µ
µA
V
V
V
V
V
V
V
A
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
C
C
C
Q
2/6
Forward
fs
VCE=25V IC=20A 35 S
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Tr ansfer
res
VCE=25V f=1MHz VGE= 0 2300
165
28
Capacit a nc e
Gat e Ch ar ge VCE= 280 V IC=20A VGE=5V 51 nC
G
pF
pF
pF
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