SGS Thomson Microelectronics STGP12NB60HD Datasheet

STGP12NB60HD
N-CHANNEL 12A - 600V TO-220
PowerMESH™ IGBT
TYPE V
STGP12NB60HD 600 V < 2.8 V12A
HIGH INPUT IMPEDANCE
LOW ON-VOLTAGE DROP (V
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
CO-PACKAGED WITH TURBOSWITCHT
ANTIPARALLEL DIODE
CES
V
CE(sat)
cesat
I
C
)
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics ha s de­signed an advanced family of IGBTs, the Power­MESH™ I GBTs, with outstanding perfomances.
The suffix "H" identifies a family o ptimized for high frequency app lications (up to 50kHz)in o rder to
achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS
HIGH FREQUENCY MOTOR CONTROLS
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
UP S
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
ICM()
P
TOT
T
stg
T
j
() Pulsewidthlimitedbysafeoperatingarea
Collector-Emitter Voltage (VGS=0) Emitter-Collector Voltage 20 V Gate-Emitter Voltage ± 20 V Collector Current (continuous) at TC=25°C Collector Current (continuous) at TC=100°C Collector Current (pulsed) 96 A Total Dissipation at TC= 25°C Derating Factor 0.8 W/°C Storage Temperature –65 to 150 °C Max. Operating Junction Temperature 150 °C
600 V
24 A 12 A
100 W
1/9July 2003
STGP12NB60HD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC= 250 µA, VGE= 0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
VCE= Max Rating, TC=125°C V
= ± 20V , VCE= 0 ±100 nA
GE
10 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE= 15V, IC=12A VGE=15V,IC=12A,Tj=125°C
=250µA
35V
2.0 2.8 V
1.7 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
C C C
Forward Transconductance
fs
Input Capacitance
ies
Output Capacitance 120 pF
oes
Reverse Transfer
res
Capacitance
Q Q Q
I
Total Gate Charge
g
Gate-Emitter Charge
ge
Gate-Collector Charge
gc
Latching Current V
CL
=15V,IC=12A
CE
V
=25V,f=1MHz,VGE=0
CE
= 480V, IC=12A,
V
CE
VGE= 15V
= 480 V , Tj = 150°C
clamp
=10
R
G
10 S
920 pF
27 pF
68 10 30
48 A
nC nC nC
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480 V, IC=12A
V
CC
R
=10Ω,VGE=15V
G
V
= 480 V, IC=12A
CC
=10Ω, VGE=15V,
R
G
Tj =125°C
5
46
800 290
2/9
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time Rise Time
r
Turn-on Current Slope
on
Turn-on Switching Losses
ns ns
A/µs
µJ
STGP12NB60HD
T
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
= 480 V, IC= 12A,
cc
=10,VGE=15V
R
GE
V
= 480 V, IC=12A,
cc
RGE=10,VGE=15V Tj = 125 °C
=6A,Tj=125°C
I
f
=6A,VR=50V,
I
f
Tj = 125°C, di/dt = 100 A/µs
150 ns
230 ns
12 48
1.3
1.9
1.1 80
240
5.5
tr(V
td(
E
off
t
r(Voff
td(
E
off
t
c
off
off
t
f
(**)
E
ts
t
c
off
t
f
(**)
E
ts
Cross-over Time
)
Off Voltage Rise Time 27 ns
)
Delay Time 76 ns Fall Time 92 ns Turn-off Switching Loss 0.21 Total Switching Loss 0.49 Cross-over Time
)
Off Voltage Rise Time 76 ns
)
Delay Time 95 ns Fall Time 200 ns Turn-off Switching Loss 0.45 Total Switching Loss 0.74
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
f
t
rr
Q
rr
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Forward Current Forward Current pulsed
Forward On-Voltage If=6A
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
mJ mJ
mJ mJ
A A
V V
ns
nC
A
hermal Impedance
3/9
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