SGS Thomson Microelectronics STGP12NB60H Datasheet

STGP12NB60H

N-CHANNEL 12A - 600V TO-220

PowerMESH IGBT

PRELIMINARY DATA

■ HIGHINPUTIMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP(V

CESAT

)

■ LOW GATE CHARGE

■ HIGHCURRENT CAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDE TAIL CURRENT

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).

APPLICATIONS

■ HIGHFREQUENCYMOTORCONTROLS

■ SMPSAND PFC IN BOTH HARD SWITCH

AND RESONANTTOPOLOGIES

■ UPS



INTERNAL SCHEMATIC DIAGRAM

June 1999

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

Collect o r -Em i t t er Voltage (VGS= 0) 600 V

V

ECR

Emit t er-Coll ect or Voltage 20 V

V

GE

Gate-Emitter Voltage

±

20 V

I

C

Collect o r Current (continuous) at Tc=25oC24A

I

C

Collect o r Current (continuous) at Tc= 100oC12A

I

CM

(•) Collect o r Current (pulsed) 96 A

P

tot

Tot al Diss i pat ion at Tc=25oC 100 W
Derat ing Factor 0.8 W/

o

C

T

stg

Sto rage Temperature -65 to 150

o

C

T

j

Max. O perating Junction T emperature 150

o

C

(•) Pulse width limitedby safe operatingarea

TYPE V

CES

V

CE(sat)

I

C

ST G P12NB60H 600 V < 2. 8 V 12 A

1

2

3

TO-220

1/8

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-h

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-heatsink Typ

1.25

62.5

0.5

o

C/W

oC/W

o

C/W

ELECTRICAL CHARACTERISTICS

(T

j

=25oC unless otherwisespecified)

OFF

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

V

BR(CES)

Collector-Emitter
Break dow n V o lt age

IC=250µAVGE= 0 600 V

I

CES

Collect o r cut- off
(V

GE

=0)

V

CE

=MaxRating Tj=25oC

V

CE

=MaxRating Tj=125oC

10

100

µA
µ

A

I

GES

Gat e- Em i t t er Leak age
Current (V

CE

=0)

V

GE

= ± 20 V VCE=0 ±100 nA

ON(∗)

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

V

GE(th)

Gate Threshold
Voltage

VCE=VGEIC= 250 µA35V

V

CE(SAT)

Collector-Emitter
Sat urat ion Voltage

VGE=15V IC=12A
V

GE

=15V IC=12A Tj= 125oC

2.0

1.7

2.8 V
V

DYNAMIC

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

g

fs

Forward
Tr ansc on duc tance

VCE=25 V IC=12A 9.5 S

C

ies

C

oes

C

res

Input Capaci t anc e
Out put Capac it ance
Reverse Tr ansfer
Capacit a nc e

VCE=25V f=1MHz VGE= 0 950

120

27

pF
pF
pF

Q

G

Q

GE

Q

GC

Tot al Gate Charge
Gate-Emitt er Charge
Gat e- Col lect or C harge

VCE= 480 V IC=12A VGE=15V 68

10
30

nC
nC
nC

I

CL

Latc hing C urrent V

clamp

=480 RG=10 Ω

T

j

= 150oC

48 A

SWITCHINGON

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

t

d(on)

t

r

Delay T ime
Rise Tim e

VCC= 480 V IC=12A
V

GE

=15V RG=10Ω

5

46

ns
ns

(di/dt)

on

E

on

Tur n-on Current Slope
Turn-on

Switching Losses

VCC=480V IC=12A
R

G

=10Ω VGE=15V

T

j

=125oC

1000

290

A/µs

µ

J

STGP12NB60H

2/8

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Sym bol Param e t er Test Condition s Min . Typ. Max. Unit

t

c

tr(v

off

)

t

d(off

)

t

f

E

off

(**)

E

ts

Cross-O ver Time
Off Voltage Rise Time
Delay T ime
Fall T ime
Turn-off Switching Loss
Tot al Switching Los s

VCC=480V IC=12A
R

GE

=10

Ω

VGE=15V

150

27
76
92

0.21

0.49

ns
ns
ns

ns
mJ
mJ

t

c

tr(v

off

)

t

d(off

)

t

f

E

off

(**)

E

ts

Cross-O ver Time
Off Voltage Rise Time
Delay T ime
Fall T ime
Turn-off Switching Loss
Tot al Switching Los s

VCC=480V IC=12A
R

GE

=10

Ω

VGE=15V

T

j

= 125oC

230

76
95

200

0.45

0.74

ns

ns

ns

ns
mJ
mJ

(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)

ThermalImpedance

STGP12NB60H

3/8